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FM25L04B-DGTR

Description
SPECIALTY MEMORY CIRCUIT, PDSO8
Categorystorage    storage   
File Size206KB,14 Pages
ManufacturerRamtron International Corporation (Cypress Semiconductor Corporation)
Websitehttp://www.cypress.com/
Environmental Compliance
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FM25L04B-DGTR Overview

SPECIALTY MEMORY CIRCUIT, PDSO8

FM25L04B-DGTR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRamtron International Corporation (Cypress Semiconductor Corporation)
Parts packaging codeDFN
package instructionHVSON, SOLCC8,.16,37
Contacts8
Reach Compliance Codeunknow
JESD-30 codeR-PDSO-N8
length4.5 mm
memory density4096 bi
Memory IC TypeMEMORY CIRCUIT
memory width8
Number of functions1
Number of terminals8
word count512 words
character code512
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512X8
Package body materialPLASTIC/EPOXY
encapsulated codeHVSON
Encapsulate equivalent codeSOLCC8,.16,37
Package shapeRECTANGULAR
Package formSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
power supply3/3.3 V
Certification statusNot Qualified
Maximum seat height0.85 mm
Maximum standby current0.000006 A
Maximum slew rate0.003 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formNO LEAD
Terminal pitch0.95 mm
Terminal locationDUAL
width4 mm
Preliminary
FM25L04B
4Kb Serial 3V F-RAM Memory
Features
4K bit Ferroelectric Nonvolatile RAM
Organized as 512 x 8 bits
High Endurance 100 Trillion (10
14
) Read/Writes
38 Year Data Retention (
@
+75ºC)
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 2.7-3.6V
200
µA
Active Current (1 MHz)
3
µA
(typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40°C to +85°C
8-pin “Green”/RoHS SOIC and TDFN Packages
Description
The FM25L04B is a 4-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM25L04B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after each byte has
been transferred to the device. The next bus cycle
may commence without the need for data polling.
The FM25L04B is capable of supporting 10
14
read/write cycles, or a million times more write
cycles than EEPROM.
These capabilities make the FM25L04B ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of EEPROM can
cause data loss.
The FM25L04B provides substantial benefits to users
of serial EEPROM as a hardware drop-in
replacement. The FM25L04B uses the high-speed
SPI bus, which enhances the high-speed write
capability
of
F-RAM
technology.
Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
Pin Configuration
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI
Top View
/CS
SO
/WP
VSS
1
2
3
4
8
7
6
5
VDD
/HOLD
SCK
SI
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
Ordering Information
FM25L04B-G
FM25L04B-GTR
FM25L04B-DG
FM25L04B-DGTR
“Green”/RoHS 8-pin SOIC
“Green”/RoHS 8-pin SOIC,
Tape & Reel
“Green”/RoHS 8-pin TDFN
“Green”/RoHS 8-pin TDFN,
Tape & Reel
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-F-RAM, (719) 481-7000
www.ramtron.com
Rev. 1.3
Feb. 2011
Page 1 of 14

FM25L04B-DGTR Related Products

FM25L04B-DGTR FM25L04B FM25L04B-DG FM25L04B-G
Description SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8
memory width 8 8 8 8
Number of functions 1 1 1 1
Number of terminals 8 8 8 8
Maximum operating temperature 85 °C 85 Cel 85 °C 85 °C
Minimum operating temperature -40 °C -40 Cel -40 °C -40 °C
organize 512X8 512 X 8 512X8 512X8
surface mount YES Yes YES YES
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form NO LEAD GULL WING NO LEAD GULL WING
Terminal location DUAL DUAL DUAL DUAL
Is it Rohs certified? conform to - conform to conform to
Maker Ramtron International Corporation (Cypress Semiconductor Corporation) - Ramtron International Corporation (Cypress Semiconductor Corporation) Ramtron International Corporation (Cypress Semiconductor Corporation)
Parts packaging code DFN - DFN SOIC
package instruction HVSON, SOLCC8,.16,37 - HVSON, SOLCC8,.16,37 SOP, SOP8,.25
Contacts 8 - 8 8
Reach Compliance Code unknow - unknow unknow
JESD-30 code R-PDSO-N8 - R-PDSO-N8 R-PDSO-G8
length 4.5 mm - 4.5 mm 4.9 mm
memory density 4096 bi - 4096 bi 4096 bi
Memory IC Type MEMORY CIRCUIT - MEMORY CIRCUIT MEMORY CIRCUIT
word count 512 words - 512 words 512 words
character code 512 - 512 512
Operating mode SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code HVSON - HVSON SOP
Encapsulate equivalent code SOLCC8,.16,37 - SOLCC8,.16,37 SOP8,.25
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE - SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE
power supply 3/3.3 V - 3/3.3 V 3/3.3 V
Certification status Not Qualified - Not Qualified Not Qualified
Maximum seat height 0.85 mm - 0.85 mm 1.75 mm
Maximum standby current 0.000006 A - 0.000006 A 0.000006 A
Maximum slew rate 0.003 mA - 0.003 mA 0.003 mA
Maximum supply voltage (Vsup) 3.6 V - 3.6 V 3.6 V
Minimum supply voltage (Vsup) 2.7 V - 2.7 V 2.7 V
Nominal supply voltage (Vsup) 3.3 V - 3.3 V 3.3 V
technology CMOS - CMOS CMOS
Terminal pitch 0.95 mm - 0.95 mm 1.27 mm
width 4 mm - 4 mm 3.9 mm

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