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FM25L16B-DG

Description
SPECIALTY MEMORY CIRCUIT, PDSO8
Categorystorage    storage   
File Size147KB,14 Pages
ManufacturerRamtron International Corporation (Cypress Semiconductor Corporation)
Websitehttp://www.cypress.com/
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FM25L16B-DG Overview

SPECIALTY MEMORY CIRCUIT, PDSO8

FM25L16B-DG Parametric

Parameter NameAttribute value
MakerRamtron International Corporation (Cypress Semiconductor Corporation)
Parts packaging codeDFN
package instructionHVSON,
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
JESD-30 codeR-PDSO-N8
length4.5 mm
memory density16384 bit
Memory IC TypeMEMORY CIRCUIT
memory width8
Number of functions1
Number of terminals8
word count2048 words
character code2000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2KX8
Package body materialPLASTIC/EPOXY
encapsulated codeHVSON
Package shapeRECTANGULAR
Package formSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Certification statusNot Qualified
Maximum seat height0.85 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formNO LEAD
Terminal pitch0.95 mm
Terminal locationDUAL
width4 mm
Preliminary
FM25L16B
16Kb Serial 3V F-RAM Memory
Features
16K bit Ferroelectric Nonvolatile RAM
Organized as 2,048 x 8 bits
High Endurance 100 Trillion (10
14
) Read/Writes
38 Year Data Retention (
@
+75ºC)
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 2.7-3.6V
200
µA
Active Current (1 MHz)
3
µA
(typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40°C to +85°C
8-pin “Green”/RoHS SOIC and TDFN Packages
Description
The FM25L16B is a 16-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM25L16B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after each byte has
been transferred to the device. The next bus cycle
may commence without the need for data polling.
The FM25L16B is capable of supporting 10
14
read/write cycles, or a million times more write
cycles than EEPROM.
These capabilities make the FM25L16B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25L16B provides substantial benefits to users
of serial EEPROM as a hardware drop-in
replacement. The FM25L16B uses the high-speed
SPI bus, which enhances the high-speed write
capability
of
F-RAM
technology.
Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
Pin Configuration
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI
Top View
/CS
SO
/WP
VSS
1
2
3
4
8
7
6
5
VDD
/HOLD
SCK
SI
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
Ordering Information
FM25L16B-G
FM25L16B-GTR
FM25L16B-DG
FM25L16B-DGTR
“Green”/RoHS 8-pin SOIC
“Green”/RoHS 8-pin SOIC,
Tape & Reel
“Green”/RoHS 8-pin TDFN
“Green”/RoHS 8-pin TDFN,
Tape & Reel
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Rev. 1.3
Mar. 2011
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-F-RAM, (719) 481-7000
www.ramtron.com
Page 1 of 14

FM25L16B-DG Related Products

FM25L16B-DG FM25L16B FM25L16B-DGTR FM25L16B-G
Description SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8
length 4.5 mm 4.5 mm 4.5 mm 4.9 mm
memory width 8 8 8 8
Number of functions 1 1 1 1
Number of terminals 8 8 8 8
Maximum operating temperature 85 °C 85 Cel 85 °C 85 °C
Minimum operating temperature -40 °C -40 Cel -40 °C -40 °C
organize 2KX8 2KX8 2KX8 2KX8
surface mount YES YES YES YES
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form NO LEAD NO LEAD NO LEAD GULL WING
Terminal location DUAL DUAL DUAL DUAL
width 4 mm 4 mm 4 mm 3.9 mm
Maker Ramtron International Corporation (Cypress Semiconductor Corporation) - Ramtron International Corporation (Cypress Semiconductor Corporation) Ramtron International Corporation (Cypress Semiconductor Corporation)
Parts packaging code DFN - DFN SOIC
package instruction HVSON, - HVSON, SOP,
Contacts 8 - 8 8
Reach Compliance Code unknown - unknown unknown
ECCN code EAR99 - EAR99 EAR99
JESD-30 code R-PDSO-N8 - R-PDSO-N8 R-PDSO-G8
memory density 16384 bit - 16384 bit 16384 bit
Memory IC Type MEMORY CIRCUIT - MEMORY CIRCUIT MEMORY CIRCUIT
word count 2048 words - 2048 words 2048 words
character code 2000 - 2000 2000
Operating mode SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code HVSON - HVSON SOP
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE - SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE
Certification status Not Qualified - Not Qualified Not Qualified
Maximum seat height 0.85 mm - 0.85 mm 1.75 mm
Maximum supply voltage (Vsup) 3.6 V - 3.6 V 3.6 V
Minimum supply voltage (Vsup) 2.7 V - 2.7 V 2.7 V
Nominal supply voltage (Vsup) 3.3 V - 3.3 V 3.3 V
technology CMOS - CMOS CMOS
Terminal pitch 0.95 mm - 0.95 mm 1.27 mm

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