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FM25W256

Description
SPECIALTY MEMORY CIRCUIT, PDSO8
Categorystorage   
File Size289KB,13 Pages
ManufacturerRamtron International Corporation (Cypress Semiconductor Corporation)
Websitehttp://www.cypress.com/
Download Datasheet Parametric View All

FM25W256 Overview

SPECIALTY MEMORY CIRCUIT, PDSO8

FM25W256 Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage5.5 V
Minimum supply/operating voltage2.7 V
Rated supply voltage3.3 V
Processing package descriptionGreen, MS-012AA, SOIC-8
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal spacing1.27 mm
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
Temperature levelINDUSTRIAL
memory width8
organize32K × 8
storage density262144 deg
operating modeSynchronize
Number of digits32768 words
Number of digits32K
Memory IC typememory circuit
Preliminary
FM25W256
256Kb Wide Voltage SPI F-RAM
Features
256K bit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
High Endurance 100 Trillion (10
14
) Read/Writes
38 Year Data Retention (
@
+75ºC)
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Low Power Operation
Wide Voltage Operation 2.7V – 5.5V
15 µA (typ.) Standby Current
Industry Standard Configurations
Industrial Temperature -40°C to +85°C
8-pin “Green”/RoHS SOIC (-G)
Description
The FM25W256 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM25W256 performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after it has been
successfully transferred to the device. The next bus
cycle may commence immediately without the need
for data polling. In addition, the product offers
substantial write endurance compared with other
nonvolatile memories. The FM25W256 is capable of
supporting 10
14
read/write cycles, or 100 million
times more write cycles than EEPROM.
These capabilities make the FM25W256 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of EEPROM can
cause data loss.
The FM25W256 provides substantial benefits to
users of serial EEPROM as a hardware drop-in
replacement. The FM25W256 uses the high-speed
SPI bus, which enhances the high-speed write
capability
of
F-RAM
technology.
Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
Pin Configuration
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage (2.7 to 5.5V)
Ground
Ordering Information
FM25W256-G
FM25W256-GTR
“Green”/RoHS 8-pin SOIC
“Green”/RoHS 8-pin SOIC,
Tape & Reel
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.3
Feb. 2011
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Page 1 of 13

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