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150AQ045TR

Description
15 A, 30 V, SILICON, RECTIFIER DIODE, DO-204AR
Categorysemiconductor    Discrete semiconductor   
File Size114KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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150AQ045TR Overview

15 A, 30 V, SILICON, RECTIFIER DIODE, DO-204AR

VS-150SQ... Series
Vishay Semiconductors
Photovoltaic Solar Cell Protection Schottky Rectifier, 15 A
FEATURES
Cathode
Anode
DO-204AR
150 °C T
J
operation
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long
term reliability
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Lead (Pb)-free plating
Compliant to RoHS directive 2002/95/EC
Designed and qualified for industrial level
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
V
R
15 A
30 V to 45 V
The VS-150SQ... axial leaded Schottky rectifier series has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies,
converters, freewheeling diodes, and reverse battery
protection.
T
J
200 °C for use in solar cell box as a bypass diode for
protection, using DC forward current without reverse bias.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
15 Apk, T
J
= 125 °C
Range
(1)
DC
CHARACTERISTICS
VALUES
15
30 to 45
2150
0.48
- 55 to 150
UNITS
A
V
A
V
°C
Note
(1)
T
200 °C for DC current without reverse voltage
J
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-150SQ030 VS-150SQ035 VS-150SQ040 VS-150SQ045
30
35
40
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
For DC solar application T
C
= 172 °C (T
J
= 200 °C)
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1.8 A, L = 7.4 mH
Current decaying linearly to zero in 1 μs
Frequency limited by, T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
15
2150
340
12
1.8
mJ
A
A
UNITS
Document Number: 93098
Revision: 15-Jun-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

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