BFU660F
NPN wideband silicon RF transistor
Rev. 1 — 11 January 2011
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A
or
equivalent standards.
1.2 Features and benefits
Low noise high linearity RF transistor
High output third-order intercept point 27 dBm at 1.8 GHz
40 GHz f
T
silicon technology
1.3 Applications
Analog/digital cordless applications
X-band high output buffer amplifier
ZigBee
SDARS second stage LNA
LTE, cellular, UMTS
NXP Semiconductors
BFU660F
NPN wideband silicon RF transistor
1.4 Quick reference data
Table 1.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
h
FE
C
CBS
f
T
IP3
O
G
p(max)
NF
Quick reference data
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
collector-base capacitance
transition frequency
output third-order intercept
point
maximum power gain
noise figure
T
sp
≤
90
°C
I
C
= 10 mA; V
CE
= 2 V;
T
j
= 25
°C
V
CB
= 2 V; f = 1 MHz
I
C
= 20 mA; V
CE
= 1 V;
f = 2 GHz; T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 4 V;
f = 5.8 GHz; T
amb
= 25
°C
I
C
= 30 mA; V
CE
= 1 V;
f = 1.8 GHz; T
amb
= 25
°C
I
C
= 6 mA; V
CE
= 2 V;
f = 1.8 GHz;
Γ
S
=
Γ
opt
;
T
amb
= 25
°C
I
C
= 60 mA; V
CE
= 4 V;
Z
S
= Z
L
= 50
Ω;
f = 1.8 GHz; T
amb
= 25
°C
[2]
[1]
Conditions
open emitter
open base
open collector
Min Typ
-
-
-
-
-
90
-
-
-
-
-
-
-
-
30
-
135
138
21
28
24
0.65
Max Unit
16
5.5
2.5
60
225
180
-
-
-
-
-
fF
GHz
dBm
dB
dB
V
V
V
mA
mW
P
L(1dB)
output power at 1 dB gain
compression
-
17
-
dBm
[1]
[2]
T
sp
is the temperature at the solder point of the emitter lead.
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= MSG.
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
1, 3
2
1
mbb159
Simplified outline
3
4
Graphic symbol
4
2
3. Ordering information
Table 3.
Ordering information
Package
Name
BFU660F
-
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
Type number
BFU660F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 11 January 2011
2 of 12
NXP Semiconductors
BFU660F
NPN wideband silicon RF transistor
4. Marking
Table 4.
BFU660F
Marking
Marking
D3*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
Conditions
open emitter
open base
open collector
T
sp
≤
90
°C
[1]
Min
-
-
-
-
-
−65
-
Max
16
5.5
2.5
60
225
+150
150
Unit
V
V
V
mA
mW
°C
°C
T
sp
is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
270
Unit
K/W
300
P
tot
(mW)
250
001aam822
200
150
100
50
0
0
40
80
120
T
sp
(°C)
160
Fig 1.
BFU660F
Power derating curve
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 11 January 2011
3 of 12
NXP Semiconductors
BFU660F
NPN wideband silicon RF transistor
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Conditions
I
C
= 2.5
μA;
I
E
= 0 mA
I
C
= 1 mA; I
B
= 0 mA
I
E
= 0 mA; V
CB
= 8 V
I
C
= 10 mA; V
CE
= 2 V
V
CB
= 2 V; f = 1 MHz
V
EB
= 0.5 V; f = 1 MHz
V
CB
= 2 V; f = 1 MHz
I
C
= 20 mA; V
CE
= 1 V; f = 2 GHz;
T
amb
= 25
°C
I
C
= 30 mA; V
CE
= 1 V; T
amb
= 25
°C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
|s
21
|
2
insertion power gain
I
C
= 30 mA; V
CE
= 1 V; T
amb
= 25
°C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
NF
noise figure
I
C
= 6 mA; V
CE
= 2 V;
Γ
S
=
Γ
opt
;
T
amb
= 25
°C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
G
ass
associated gain
I
C
= 6 mA; V
CE
= 2 V;
Γ
S
=
Γ
opt
;
T
amb
= 25
°C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
P
L(1dB)
output power at 1 dB gain compression
I
C
= 60 mA; V
CE
= 4 V;
Z
S
= Z
L
= 50
Ω;
T
amb
= 25
°C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
-
-
-
-
17
17
16
18.5
-
-
-
-
dBm
dBm
dBm
dBm
-
-
-
-
21
20
17.5
12
-
-
-
-
dB
dB
dB
dB
-
-
-
-
0.60
0.65
0.70
1.20
-
-
-
-
dB
dB
dB
dB
-
-
-
-
20
18.5
16
8.5
-
-
-
-
dB
dB
dB
dB
[1]
Min Typ
16
5.5
-
-
90
-
-
-
-
-
-
30
-
135
297
664
138
21
Max Unit
-
-
60
100
180
-
-
-
-
fF
fF
fF
GHz
V
V
mA
nA
V
(BR)CBO
collector-base breakdown voltage
V
(BR)CEO
collector-emitter breakdown voltage
I
C
I
CBO
h
FE
C
CES
C
EBS
C
CBS
f
T
G
p(max)
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
maximum power gain
-
-
-
-
25
24
22
12.5
-
-
-
-
dB
dB
dB
dB
BFU660F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 11 January 2011
4 of 12
NXP Semiconductors
BFU660F
NPN wideband silicon RF transistor
Table 7.
Characteristics
…continued
T
j
= 25
°
C unless otherwise specified
Symbol
IP3
O
Parameter
output third-order intercept point
Conditions
I
C
= 40 mA; V
CE
= 4 V;
Z
S
= Z
L
= 50
Ω;
T
amb
= 25
°C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
[1]
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= MSG.
Min Typ
Max Unit
-
-
-
-
27
27
27
28
-
-
-
-
dBm
dBm
dBm
dBm
60
I
C
(mA)
40
001aam823
200
h
FE
001aam824
(1)
(2)
(3)
(4)
(5)
(6)
150
100
20
(7)
(8)
50
0
0
1
2
3
4
V
CE
(V)
5
0
0
20
40
I
C
(mA)
60
T
amb
= 25
°C.
(1) I
B
= 400
μA
(2) I
B
= 350
μA
(3) I
B
= 300
μA
(4) I
B
= 250
μA
(5) I
B
= 200
μA
(6) I
B
= 150
μA
(7) I
B
= 100
μA
(8) I
B
= 50
μA
V
CE
= 2 V; T
amb
= 25
°C.
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
Fig 3.
DC current gain as a function of collector
current; typical values
BFU660F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 11 January 2011
5 of 12
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