SAMWIN
SW50N06A
N-channel MOSFET
Features
■
High ruggedness
■
R
DS(ON)
(Max 0.023
Ω)@V
GS
=10V
■
Gate Charge (Typ 30nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
TO-251
TO-252
BV
DSS
: 60V
I
D
: 50A
R
DS(ON)
: 0.023 ohm
1
2
1 2
3
3
2
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant
topology like a electronic ballast, and also low power switching mode power appliances.
3
Order Codes
Item
1
2
Sales Type
SW I 50N06A
SW D 50N06A
Marking
SW50N06A
SW50N06A
Package
TO-251
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
(note 1)
Parameter
Value
60
50
34
200
±
20
780
13
7
108
0.86
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R
thjc
R
thcs
R
thja
Mar. 2011. Rev. 2.0
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to sink
Thermal resistance, Junction to ambient
Value
Min.
Typ.
Max.
1.15
50
62.5
Unit
o
C/W
o
C/W
o
C/W
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SAMWIN
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Off characteristics
BV
DSS
ΔBV
DSS
/ ΔT
J
I
DSS
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
Drain to source leakage current
Gate to source leakage current, forward
I
GSS
Gate to source leakage current, reverse
V
GS
=0V, I
D
=250uA
I
D
=250uA, referenced to 25
o
C
V
DS
=60V, V
GS
=0V
V
DS
=48V, T
C
=125
o
C
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
Parameter
Test conditions
SW50N06A
Min.
Typ.
Max.
Unit
60
-
-
-
-
-
-
0.06
-
-
-
-
-
-
1
100
100
-100
V
V/
o
C
uA
uA
nA
nA
On characteristics
V
GS(TH)
R
DS(ON)
Gate threshold voltage
Drain to source on state resistance
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
= 25A
2.0
-
0.016
4.0
0.023
V
Ω
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
Turn off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
=48V, V
GS
=10V, I
D
=50A
V
DS
=30V, I
D
=25A, R
G
=25Ω
V
GS
=0V, V
DS
=25V, f=1MHz
900
430
80
50
165
78
60
36
8.6
12
45
-
-
nC
ns
1220
550
90
pF
Source to drain diode ratings characteristics
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Parameter
Continuous source current
Pulsed source current
Diode forward voltage drop.
Reverse recovery time
Breakdown voltage temperature
Test conditions
Integral reverse p-n Junction
diode in the MOSFET
I
S
=50A, V
GS
=0V
I
S
=50A, V
GS
=0V,
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
95
250
Max.
50
200
1.5
-
-
Unit
A
A
V
ns
uC
※.
Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 300uH, I
AS
= 50.0A, V
DD
= 50V, R
G
=25Ω, Starting T
J
= 25
o
C
3.
I
SD
≤ 50.0A, di/dt = 300A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SAMWIN
Fig. 1. On-state characteristics
3
SW50N06A
Fig. 2. Transfer characteristics
10
V
GS
[ V ] Top 15
10
8
7
6
5.5
5
Bottom 4.5
10
2
10
2
Id[ A ], Drain Current
I
D
[ A ], Drain Current
25[،ة]
125[،ة]
10
1
-55[،ة]
10
1
،ط Note
1. 250§ء Pulse Test
2. T
C
= 25،ة
10
0
،ط Note
V
DS
= 30 [ V ]
250§ء Pulse Test
10
0
10
-1
10
0
10
1
2
4
6
8
10
V
DS
[V], Drain to Source Voltage
Vgs[ v ], Gate-Source Voltage
Fig. 3. On-resistance variation vs.
drain current and gate voltage
70
Fig. 4. On state current vs.
diode forward voltage
Drain to Source on Resistance
60
10
2
50
40
30
V
GS
=10[V]
V
GS
=20[V]
،ط Note
T
J
= 25،ة
0
50
100
150
200
I
DR
[ A ], Reverse Drain Current
R
DS(ON)
[m§ظ]
10
1
20
Tj=175 C
o
Tj=25 C
،ط Note
V
GS
= 0V
250§ء Pulse Test
o
10
0
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
[ A ], Drain Current
Vsd[ V ], Source-Drain Voltage
Fig. 5. Capacitance characteristics
(Non-Repetitive)
3000
Fig. 6. Gate charge characteristics
12
2500
C
oss
C
iss
2. C
Oss
= C
ds
+ C
gd
3. C
rss
= C
gd
،ط Note
1. V
GS
= 0[V]
2. Frequency = 1[MHz]
V
GS
[ V ], Gate to Source Voltage[V]
1. C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
10
Capcitance [ pF ]
2000
8
V
DS
= 30V
V
DS
=12V
V
DS
= 48V
1500
6
1000
C
rss
4
500
2
،ط Note
I
D
= 50A
0
5
10
15
20
25
30
35
40
45
0
-1
10
0
10
0
10
1
V
DS
[ V ], Drain to Source Voltage
Gate Charge [nC]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SAMWIN
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
1.2
SW50N06A
Fig. 8. On resistance variation
vs. junction temperature
3.0
BV
DSS
[ V ], Breakdown Voltage
1.1
Rds(on),(Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
،ط Note
1. V
GS
= 0V
2. I
D
= 250§ث
0.5
،ط Note
1. Vgs = 10V
2. Id = 25A
-50
0
50
100
o
0.8
-100
-50
0
50
100
150
200
0.0
-100
150
200
Temperature [،ة]
Tj, Junction temperature[ C]
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 10. Maximum safe operating area
10
2
Operating Area limited
by R
DS(ON)
DC
1ms
10ms
100us
I
D
[ A ], Drain Current
10
1
Case Temp. @ 175،ة
Junction Temp.@ 25،ة
Single Pulse
،ط See Figure 11.
10
0
10
-1
10
0
10
1
10
2
V
DS
[ V ], Drain to source Voltage
Fig. 11. Transient thermal response curve
Z
¥بJC
(t), Thermal Impedance
10
0
t
1
-1
P
DM
10
t
2
<Note>
1. Z
¥بJC
(t) = 1.25،ة/W Max.
2. Duty Factor, D=t
1
/t
2
3. Z
¥بJC
(t) = (T
JM
- T
C
)/P
D
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
[ sec ], Square Wave Pulse Duration
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SAMWIN
Fig. 12. Gate charge test circuit & waveform
Same type
as DUT
V
GS
Q
G
SW50N06A
V
DS
Q
GS
Q
GD
DUT
V
GS
1mA
Charge
Fig. 13. Switching time test circuit & waveform
R
L
V
DS
90%
R
G
V
DS
V
DD
V
IN
10%
t
d(on)
t
r
t
ON
10%
t
d(off)
t
f
t
OFF
10V
IN
DUT
Fig. 14. Unclamped Inductive switching test circuit & waveform
1
L
I
AS
V
DS
R
G
10V
IN
V
DD
I
D(t)
EAS =
BV
DSS
I
AS
2
BV
DSS
LX
I
AS2
X
BV
DSS
- V
DD
DUT
V
DS(t)
time
t
p
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