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20CTQ035SPBF_10

Description
20 A, 35 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size127KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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20CTQ035SPBF_10 Overview

20 A, 35 V, SILICON, RECTIFIER DIODE

VS-20CTQ...SPbF, VS-20CTQ...-1PbF Series
Vishay High Power Products
Schottky Rectifier, 2 x 10 A
VS-20CTQ...SPbF
VS-20CTQ...-1PbF
FEATURES
175 °C T
J
operation
Center tap TO-220 package
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Halogen-free according to IEC 61249-2-21 definition
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
D
2
PAK
TO-262
DESCRIPTION
The VS-20CTQ... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 10 A
35 V to 45 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 μs sine
10 Apk, T
J
= 125 °C (per leg)
Range
VALUES
20
35 to 45
1060
0.57
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-20CTQ035SPbF
VS-20CTQ035-1PbF
35
VS-20CTQ040SPbF
VS-20CTQ040-1PbF
40
VS-20CTQ045SPbF
VS-20CTQ045-1PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 145 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
20
1060
265
13
2.0
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 2.0 A, L = 6.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 94163
Revision: 12-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1

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Description 20 A, 35 V, SILICON, RECTIFIER DIODE 20 A, 35 V, SILICON, RECTIFIER DIODE 20 A, 35 V, SILICON, RECTIFIER DIODE 20 A, 40 V, SILICON, RECTIFIER DIODE, TO-262AA 20 A, 35 V, SILICON, RECTIFIER DIODE

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