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20ETF10SRTT

Description
20 A, 800 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size183KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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20ETF10SRTT Overview

20 A, 800 V, SILICON, RECTIFIER DIODE

20ETF..S Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 20 A
FEATURES/DESCRIPTION
Base
common
cathode
+
2
The 20ETF..S fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
D
2
PAK (SMD-220)
1
Anode -
3
- Anode
This product series has been designed and qualified for
industrial level.
APPLICATIONS
PRODUCT SUMMARY
V
F
at 20 A
I
FSM
V
RRM
< 1.31 V
355 A
800 to 1200 V
• Output rectification and
choppers and converters
freewheeling
in
inverters,
• Input rectifications where severe restrictions on conducted
EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
20 A, T
J
= 25 °C
1 A, 100 A/µs
Range
CHARACTERISTICS
Sinusoidal waveform
VALUES
20
800 to 1200
355
1.31
95
- 40 to 150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
20ETF08S
20ETF10S
20ETF12S
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
6
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
√t
TEST CONDITIONS
T
C
= 97 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
VALUES
20
300
355
450
635
6350
A
2
s
A
2
√s
A
UNITS
Document Number: 93141
Revision: 22-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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