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30ETH06SPBF_10

Description
30 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA
Categorysemiconductor    Discrete semiconductor   
File Size174KB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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30ETH06SPBF_10 Overview

30 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA

30ETH06SPBF_10 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionLEAD FREE, PLASTIC, TO-262, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
packaging shapeRectangle
Package SizeIN-line
Terminal formTHROUGH-hole
terminal coatingtin copper
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionCATHODE
Diode component materialssilicon
Diode typerectifier diode
applicationHYPERFAST SOFT RECOVERY
Phase1
Maximum reverse recovery time0.0350 us
Maximum repetitive peak reverse voltage600 V
Maximum average forward current30 A
Maximum non-repetitive peak forward current200 A
VS-30ETH06SPbF, VS-30ETH06-1PbF
Vishay High Power Products
Hyperfast Rectifier, 30 A FRED Pt
®
VS-30ETH06SPbF
VS-30ETH06-1PbF
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 125 °C operating junction temperature
Base
cathode
2
2
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
1
N/C
3
Anode
1
N/C
3
Anode
D
2
PAK
TO-262
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
ac-to-dc section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
t
rr
(typical)
I
F(AV)
V
R
28 ns
30 A
600 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 103 °C
T
J
= 25 °C
TEST CONDITIONS
MAX.
600
30
200
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 30 A
I
F
= 30 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.0
1.34
0.3
60
33
8.0
MAX.
-
2.6
1.75
50
500
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 94020
Revision: 11-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1

30ETH06SPBF_10 Related Products

30ETH06SPBF_10 30ETH06STRLPBF
Description 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB
Number of terminals 3 2
Number of components 1 1
Terminal form THROUGH-hole GULL WING
Terminal location single SINGLE
Shell connection CATHODE CATHODE
Diode component materials silicon SILICON
Diode type rectifier diode RECTIFIER DIODE
application HYPERFAST SOFT RECOVERY HYPERFAST SOFT RECOVERY
Phase 1 1
Maximum reverse recovery time 0.0350 us 0.035 µs
Maximum repetitive peak reverse voltage 600 V 600 V
Maximum non-repetitive peak forward current 200 A 200 A
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