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30L30CT-1PBF_10

Description
15 A, 30 V, SILICON, RECTIFIER DIODE, TO-262AA
Categorysemiconductor    Discrete semiconductor   
File Size126KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

30L30CT-1PBF_10 Overview

15 A, 30 V, SILICON, RECTIFIER DIODE, TO-262AA

VS-30L30CT-1PbF
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base
common
cathode
2
FEATURES
150 °C T
J
operation
Center tap configuration
Very low forward voltage drop
High frequency operation
High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Halogen-free according to IEC 61249-2-21 definition
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
TO-262
2
1 Common
3
Anode cathode Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
TO-262AA
2 x 15 A
30 V
0.37 V
350 mA at 125 °C
150 °C
Common cathode
15 mJ
DESCRIPTION
This center tap Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
V
F
T
J
15 Apk, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
30
30
0.37
- 55 to 150
UNITS
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-30L30CT-1PbF
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per device
per leg
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 140 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
30
15
1450
220
15
2
mJ
A
A
UNITS
Maximum peak one cycle non-repetitive
surge current
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
T
J
= 25 °C, I
AS
= 2 A, L = 7.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 94196
Revision: 05-Oct-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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