VS-30MQ040-M3
Vishay Semiconductors
Schottky Rectifier, 3 A
FEATURES
• Extremely low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Halogen-free according to IEC 61249-2-21
definition
• Surface mountable
• Compact size
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
Cathode
Anode
SMA
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
SMA
3A
40 V
0.46 V
20 mA at 125 °C
150 °C
Single die
6.0 mJ
APPLICATIONS
•
•
•
•
•
•
•
Switching power supplies
Meter protection
Reverse protection for power input to PC board circuits
Battery isolation and charging
Low threshold voltage diode
Freewheeling or by-pass diode
Low voltage clamp
DESCRIPTION
The VS-30MQ040-M3 Schottky rectifier is designed to be
used for low power applications where a reverse voltage of
40 V is encountered and surface mountable is required.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
2 Apk, T
J
= 125 °C
Range
DC
CHARACTERISTICS
VALUES
3
40
330
0.43
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-30MQ040-M3
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
L
= 89 °C, rectangular waveform
On PC board 9 mm
2
island
(0.013 mm thick copper pad area)
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
VALUES
3
330
A
140
6.0
1.0
mJ
A
UNITS
A
Document Number: 93354
Revision: 10-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-30MQ040-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
1A
Maximum forward voltage drop
See fig. 1
V
FM (1)
3A
1A
3A
Maximum reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width = 300 μs, duty cycle = 2 %
I
RM
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 10 V
DC
, T
J
= 25 °C, test signal = 1 MHz
Measured lead to lead 5 mm from package body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.42
0.51
0.34
0.46
0.5
20
0.26
64.6
134
2.0
10 000
mA
V
m
pF
nH
V/μs
V
UNITS
Schottky Rectifier, 3 A
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device
Note
(1)
SYMBOL
T
J (1)
, T
Stg
R
thJA
DC operation
TEST CONDITIONS
VALUES
- 40 to 150
80
0.07
0.002
UNITS
°C
°C/W
g
oz.
3F
Case style SMA (similar D-64)
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93354
Revision: 10-Sep-10
VS-30MQ040-M3
Schottky Rectifier, 3 A
Vishay Semiconductors
Allowable Case Temperature (°C)
10
150
140
130
120
110
100
90
80
70
60
50
40
30
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
0.5
1.0
1.5
2.0
2.5
3.0
See note (1)
Square wave (D = 0.50)
80 % rated V
R
applied
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
I
F
- Instantaneous Forward
Current (A)
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0.2
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
1.6
100
T
J
= 150 °C
I
R
- Reverse Current (mA)
Average Power Loss (W)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
1
RMS limit
0.1
T
J
= 50 °C
0.01
T
J
= 25 °C
0.001
0
5
10
15
20
25
30
35
40
0
0.5
1.0
1.5
2.0
2.5
3.0
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
5
10
15
20
25
30
35
40
45
100
10
100
1000
10 000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
(1)
t
p
- Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Document Number: 93354
Revision: 10-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-30MQ040-M3
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
Schottky Rectifier, 3 A
VS-
1
1
2
3
4
5
6
-
-
-
-
-
-
30
2
M
3
Q
4
040
5
-M3
6
Vishay Semiconductors product suffix
Current rating
M = SMA
Q = Schottky “Q” series
Voltage rating (040 = 40 V)
Environmental digit:
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-30MQ040-M3/5AT
PREFERRED PACKAGE CODE
5AT
MINIMUM ORDER QUANTITY
7500
PACKAGING DESCRIPTION
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95400
www.vishay.com/doc?95403
www.vishay.com/doc?95404
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93354
Revision: 10-Sep-10
Outline Dimensions
Vishay Semiconductors
SMA
DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.066 (1.68)
MIN.
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 95400
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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