EEWORLDEEWORLDEEWORLD

Part Number

Search

BFU690F_15

Description
NPN wideband silicon RF transistor
File Size135KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Compare View All

BFU690F_15 Overview

NPN wideband silicon RF transistor

BFU690F
NPN wideband silicon RF transistor
Rev. 2 — 14 March 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
1.2 Features and benefits
Low noise high linearity microwave transistor
High output third-order intercept point 34 dBm at 1.8 GHz
40 GHz f
T
silicon technology
1.3 Applications
Ka band oscillators DRO’s
C-band high output buffer amplifier
ZigBee
LTE, cellular, UMTS
1.4 Quick reference data
Table 1.
V
CBO
V
CEO
V
EBO
I
C
P
tot
h
FE
C
CBS
f
T
G
p(max)
NF
P
L(1dB)
Quick reference data
Conditions
open emitter
open base
open collector
T
sp
85
C
I
C
= 20 mA; V
CE
= 2 V; T
j
= 25
C
V
CB
= 2 V; f = 1 MHz
I
C
= 60 mA; V
CE
= 1 V; f = 2 GHz;
T
amb
= 25
C
I
C
= 60 mA; V
CE
= 1 V; f = 1.8 GHz;
T
amb
= 25
C
I
C
= 15 mA; V
CE
= 2 V; f = 1.8 GHz;
S
=
opt
[2]
[1]
Symbol Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
collector-base capacitance
transition frequency
maximum power gain
noise figure
Min Typ Max Unit
-
-
-
-
-
90
-
-
-
-
-
-
-
-
70
-
16
5.5
2.5
V
V
V
100 mA
490 mW
fF
GHz
dB
dB
dBm
135 180
404 -
18
-
20.5 -
0.65 -
22
-
output power at 1 dB gain compression I
C
= 70 mA; V
CE
= 4 V; Z
S
= Z
L
= 50
;
f = 1.8 GHz; T
amb
= 25
C
[1]
[2]
T
sp
is the temperature at the solder point of the emitter lead.
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).

BFU690F_15 Related Products

Description
Differences between LDO and DC-DC devices
DCDC means DC to DC (conversion of different DC power values). Any device that meets this definition can be called a DCDC converter, including LDO. However, the general term is that the device that co...
zbz0529 Power technology
Discuss two issues about the use of Xilinx PlanAhead
Using the integrated PlanAhead feature in Project Navigator only supports four modes, as shown in the following figure:Download (83.89 KB) 14 minutes ago 1. I want to implement partition design throug...
fangliball FPGA/CPLD
Nordic Bluetooth sensor monitors guitar temperature and humidity
Recently launched on the forumDevelopment competition based on ON Semiconductor's low-power Bluetooth chip RSL10, 10,000 yuan gift Some netizens want to participate, but feel that Bluetooth has run ou...
nmg Sensor
Engineers, look here - 10 stupid things smart people do when measuring electrical
I have collected a very good article, so I repost it to you, hoping it will be helpful to engineers: Anyone who works with electricity for a living quickly develops a rational respect for anything tha...
思维翱翔 Industrial Control Electronics
Please help me~~~ Two functions in EVC are not defined.
error C2065: 'GetRunningObjectTable' : undeclared identifier error C2065: 'CreateItemMoniker' : undeclared identifier I am using EVC 4.0+SP4...
djsrryd Embedded System
Small tools that may be used for serial port debugging
Serial port debugging wizard can be used for serial port debugging...
backhuli MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1801  920  1759  1307  1004  37  19  36  27  21 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号