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BFU725F_N1_15

Description
NPN wideband silicon germanium RF transistor
File Size101KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BFU725F_N1_15 Overview

NPN wideband silicon germanium RF transistor

BFU725F/N1
NPN wideband silicon germanium RF transistor
Rev. 2 — 3 November 2011
Product data sheet
1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A
or
equivalent standards.
1.2 Features and benefits
Low noise high gain microwave transistor
Noise figure (NF) = 0.7 dB at 5.8 GHz
High maximum stable gain 27 dB at 1.8 GHz
110 GHz f
T
silicon germanium technology
1.3 Applications
2nd LNA stage and mixer stage in DBS LNB’s
Satellite radio
Low noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog/digital cordless applications
Ka band oscillators (DRO’s)
1.4 Quick reference data
Table 1.
V
CBO
V
CEO
V
EBO
I
C
P
tot
h
FE
Quick reference data
Conditions
open emitter
open base
open collector
T
sp
90
C
I
C
= 10 mA; V
CE
= 2 V;
T
j
= 25
C
[1]
Symbol Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
Min
-
-
-
-
-
160
Typ
-
-
-
25
-
280
Max
10
2.8
1.0
40
136
400
Unit
V
V
V
mA
mW

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