BFU768F
NPN wideband silicon germanium RF transistor
Rev. 1.2 — 24 December 2012
Product data sheet
1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A
or
equivalent standards.
1.2 Features and benefits
Low noise high linearity RF transistor
110 GHz f
T
silicon germanium technology
Optimal linearity for low current and high gain
Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz
Low component count Wi-Fi LNA application circuits available for 2.4 GHz ISM band
and 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance:
Low current: 10.8 mA
Noise figure < 1.2 dB
Gain: 13.1 dB at 2.4 GHz, 12.2 dB at 5 GHz
High IP3: 15.7 dBm at 2.4 GHz, 18.8 dBm at 5 GHz
Very fast on/off times
Unconditionally stable
Higher IP3, higher gain or lower noise figure possible with different application circuits
1.3 Applications
High linearity applications
Medium output power applications
Wi-Fi / WLAN / WiMAX
ZigBee
NXP Semiconductors
BFU768F
NPN wideband silicon germanium RF transistor
1.4 Quick reference data
Table 1.
Quick reference data
Wi-Fi LNA applications circuits; I
C
= 10.8 mA; V
CE
= 2.1 V; T
amb
= 25
C;
unless otherwise specified
Symbol Parameter
V
CBO
V
CEO
V
EBO
I
C
h
FE
s
21
2
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
DC current gain
insertion power gain
I
C
= 10 mA; V
CE
= 2 V;
T
j
= 25
C
f = 2.4 GHz
f = 5.0 GHz
f = 5.9 GHz
NF
noise figure
f = 2.4 GHz
f = 5.0 GHz
f = 5.9 GHz
IP3
third-order intercept
point
f = 2.4 GHz
f = 5.0 GHz
f = 5.9 GHz
Conditions
open emitter
open base
open collector
Min
-
-
-
-
155
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
330
13.1
12.2
11.1
1.1
1.1
1.2
15.7
18.8
18.8
Max
10
2.8
1.0
70
505
-
-
-
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
Unit
V
V
V
mA
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
1, 3
2
1
mbb159
Simplified outline
3
4
Graphic symbol
4
2
3. Ordering information
Table 3.
Ordering information
Package
Name
BFU768F
-
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
Type number
BFU768F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1.2 — 24 December 2012
2 of 12
NXP Semiconductors
BFU768F
NPN wideband silicon germanium RF transistor
4. Marking
Table 4.
BFU768F
Marking
Marking
ZB*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
Conditions
open emitter
open base
open collector
T
sp
90
C
[1]
Min
-
-
-
-
-
65
-
Max
10
2.8
1.0
70
220
+150
150
Unit
V
V
V
mA
mW
C
C
T
sp
is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
270
Unit
K/W
250
P
tot
(mW)
200
001aam862
150
100
50
0
0
40
80
120
T
sp
(°C)
160
Fig 1.
BFU768F
Power derating curve
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1.2 — 24 December 2012
3 of 12
NXP Semiconductors
BFU768F
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7.
Characteristics
Wi-Fi LNA applications circuits; I
C
= 10.8 mA; V
CE
= 2.1 V; T
amb
= 25
C;
unless otherwise specified
Symbol
Parameter
Conditions
I
C
= 2.5
A;
I
E
= 0 mA
I
C
= 1 mA; I
B
= 0 mA
I
E
= 0 mA; V
CB
= 4.5 V
I
C
= 10 mA; V
CE
= 2 V
f = 2.4 GHz
f = 5.0 GHz
f = 5.9 GHz
NF
min
NF
minimum noise figure
noise figure
f = 2.4 GHz, measured on the pins
f = 5.8 GHz, measured on the pins
f = 2.4 GHz
f = 5.0 GHz
f = 5.9 GHz
RL
in
input return loss
f = 2.4 GHz
f = 5.0 GHz
f = 5.9 GHz
RL
out
output return loss
f = 2.4 GHz
f = 5.0 GHz
f = 5.9 GHz
P
L(1dB)
output power at 1 dB gain compression f = 2.4 GHz
f = 5.0 GHz
f = 5.9 GHz
IP3
third-order intercept point
f = 2.4 GHz
f = 5.0 GHz
f = 5.9 GHz
t
on
t
off
turn-on time
turn-off time
2.4 GHz Wi-Fi LNA application
4.9 GHz to 5.9 GHz Wi-Fi LNA application
2.4 GHz Wi-Fi LNA application
4.9 GHz to 5.9 GHz Wi-Fi LNA application
Min Typ
10
2.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max Unit
-
-
70
100
505
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
ns
ns
ns
ns
V
V
mA
nA
V
(BR)CBO
collector-base breakdown voltage
V
(BR)CEO
collector-emitter breakdown voltage
I
C
I
CBO
h
FE
s
21
2
collector current
collector-base cut-off current
DC current gain
insertion power gain
155 330
13.1 -
12.2 -
11.1 -
0.50 -
0.74 -
1.1
1.1
1.2
-
-
-
10.2 -
10.5 -
11.3 -
11.7 -
13.7 -
19.3 -
3.9
5.9
4.9
-
-
-
15.7 -
18.8 -
18.8 -
170
300
40
12
-
-
-
-
BFU768F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1.2 — 24 December 2012
4 of 12
NXP Semiconductors
BFU768F
NPN wideband silicon germanium RF transistor
60
(1)
001aam863
500
h
FE
400
001aam864
I
C
(mA)
40
(2)
(3)
(4)
(5)
(6)
(7)
300
200
20
(8)
(9)
100
0
0
1
2
V
CE
(V)
3
0
0
20
40
I
C
(mA)
60
T
amb
= 25
C.
(1) I
B
= 180
A
(2) I
B
= 160
A
(3) I
B
= 140
A
(4) I
B
= 120
A
(5) I
B
= 100
A
(6) I
B
= 80
A
(7) I
B
= 60
A
(8) I
B
= 40
A
(9) I
B
= 20
A
V
CE
= 2 V; T
amb
= 25
C.
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
Fig 3.
DC current gain as a function of collector
current; typical values
BFU768F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1.2 — 24 December 2012
5 of 12
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