SGA4363ZDC
to 4000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA4363Z
DC to 4000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-363
Product Description
The SGA4363Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high F
T
and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
Si BiCMOS
Gain (dB)
Features
High Gain: 14.8dB at
1950MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Applications
Gain & Return Loss vs. Frequency
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
24
ORL
0
Return Loss (dB)
SiGe BiCMOS
18
GAIN
IRL
-10
-20
-30
-40
0
1
2
3
4
Frequency (GHz)
5
6
12
6
0
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Parameter
Small Signal Gain
Min.
15.5
Specification
Typ.
17.5
14.8
14.2
14.3
13.0
28.7
25.7
4000
Max.
19.0
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>9dB
Condition
Output Power at 1dB Compression
Output Third Intercept Point
Bandwidth Determined by Return
Loss
Input Return Loss
14.4
dB
1950MHz
Output Return Loss
10.7
dB
1950MHz
Noise Figure
3.1
dB
1950MHz
Device Operating Voltage
2.9
3.2
3.5
V
Device Operating Current
41
45
49
mA
Thermal Resistance
255
°C/W
(Junction - Lead)
Test Conditions: V
S
=8V, I
D
=45mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=-5dBm, R
BIAS
=110, T
L
=25°C, Z
S
=Z
L
=50
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS111011
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SGA4363Z
Absolute Maximum Ratings
Parameter
Max Device Current (I
D
)
Max Device Voltage (V
D
)
Max RF Input Power
Max Junction Temp (T
J
)
Operating Temp Range (T
L
)
Max Storage Temp
Rating
90
5
+18
+150
-40 to +85
+150
Unit
mA
V
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
Typical Performance at Key Operating Frequencies
Parameter
Unit
100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
14.2
23.8
11.8
13.6
9.2
20.1
3.6
3500
MHz
12.5
Small Signal Gain
dB
17.7
17.6
17.5
14.8
Output Third Order Intercept Point
dBm
29.4
28.7
25.7
Output Power at 1dB Compression
dBm
14.3
14.3
13.0
Input Return Loss
dB
11.9
12.2
12.9
14.4
Output Return Loss
dB
10.2
11.5
13.3
10.7
Reverse Isolation
dB
20.9
21.4
21.4
20.7
Noise Figure
dB
2.8
2.7
3.1
Test Conditions: V
S
=8V, I
D
=45mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=-5dBm, R
BIAS
=110, T
L
=25°C, Z
S
=Z
L
=50
11.0
9.7
18.4
OIP
3
vs. Frequency
V
D
=3.2 V, I
D
= 45 mA (Typ.)
35
30
OIP
3
(dBm)
25
20
P
1dB
vs. Frequency
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
18
15
P
1dB
(dBm)
12
9
T
L
=+25ºC
15
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
T
L
=+25ºC
6
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
Noise Figure vs. Frequency
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
5
Noise Figure (dB)
4
3
2
1
T
L
=+25ºC
T
L
=+25ºC
0
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
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DS111011
SGA4363Z
Typical RF Performance Over Temperature (
Bias: V
D
= 3.2 V,
I
D
= 45 mA (Typ.)
11
)
|
S
|
vs. Frequency
20
15
10
5
21
|
S
|
vs. Frequency
0
-10
S
11
(dB)
+25°C
-40°C
+85°C
S
21
(dB)
-20
-30
T
L
0
0
1
2
3
4
Frequency (GHz)
5
T
L
-40
6
+25°C
-40°C
+85°C
0
1
2
3
4
Frequency (GHz)
5
6
|
S
|
vs. Frequency
-10
-15
S
12
(dB)
-20
-25
S
22
(dB)
12
|
S
|
vs. Frequency
0
-10
-20
-30
22
T
L
-30
0
1
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
T
L
-40
6
0
1
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
6
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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SGA4363Z
Pin
3
1, 2,
4, 5
6
Function
RF IN
GND
RF OUT/BIAS
Description
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.
Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead
inductance.
RF output and bias pin. DC voltage is present on this pin, therefor a DC-blocking capacitor is necessary for proper opera-
tion.
Suggested Pad Layout
Dimensions in inches [millimeters]
Preliminary
RF
OUT
RF
IN
Notes:
1. Provide a large ground pad area under device
pins 1, 2, 4, & 5 with many plated via holes as
shown.
2. Dimensions given for 50 Ohm RF I/O lines are for
31 mil thick Getek. Scale accordingly for different
board thicknesses and dielectric contants.
3. We recommend 1 or 2 ounce copper. Measure-
ments for this data sheet were made on a 31 mil
thick Getek with 1 ounce copper on both sides.
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
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DS111011
SGA4363Z
Application Schematic
Frequency (Mhz)
Reference
Designator
V
S
R
BIAS
1 uF
1000
pF
500
850
1950
2400
3500
C
B
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
C
D
L
C
C
D
L
C
RF in
C
B
3
1,2
SGA4363Z
Recommended Bias Resistor Values for I
D
=45mA
R
BIAS
=( V
S
-V
D
) / I
D
6
C
B
RF out
Supply Voltage(V
S
)
R
BIAS
6V
62
8V
110
10 V
150
12 V
200
4,5
Note: R
BIAS
provides DC bias stability over temperature.
Evaluation Board Layout
Mounting Instructions:
1. Use a large ground pad area near device pins 1, 2, 4, and 5 with many plated through-holes, as shown.
2. We recommend 1 or 2 ounces copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1
ounce cooper on both sides.
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 6
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