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10ETS12STRRPBF

Description
10 A, 1200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size166KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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10ETS12STRRPBF Overview

10 A, 1200 V, SILICON, RECTIFIER DIODE

10ETS12STRRPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-220AC
package instructionHALOGEN FREE AND ROHS COMPLIANT, SMD-220, D2PAK-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
applicationHIGH VOLTAGE HIGH POWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
VS-10ETS..SPbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 10 A
Base cathode
2
DESCRIPTION/FEATURES
The VS-10ETS..SPbF rectifier series has been
optimized for very low forward voltage drop, with
moderate leakage. The glass passivation
technology used has reliable operation up to
150 °C junction temperature.
Typical applications are in input rectification and
these products are designed to be used with
Vishay HPP switches and output rectifiers which
are available in identical package outlines.
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified for industrial level
D
2
PAK
1
Anode
3
Anode
PRODUCT SUMMARY
V
F
at 10 A
I
FSM
V
RRM
<1V
200 A
800 V/1200 V
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
12.0
THREE-PHASE BRIDGE
16.0
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
10 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
10
800/1200
200
1.1
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-10ETS08SPbF
VS-10ETS10SPbF
VS-10ETS12SPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
0.5
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
√t
TEST CONDITIONS
T
C
= 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
10
170
200
130
145
1450
A
2
s
A
2
√s
A
UNITS
Document Number: 94338
Revision: 08-Apr-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1

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