8EWF..SPbF Soft Recovery Series
Vishay High Power Products
Surface Mountable
Fast Soft Recovery Diode, 8 A
FEATURES/DESCRIPTION
Base
common
cathode
+
2
The 8EWF..SPbF fast soft recovery rectifier series
has been optimized for combined short reverse
recovery time, low forward voltage drop and low
leakage current.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
D-PAK
1
Anode -
3
- Anode
This series is designed and qualified for industrial level.
Compliant to RoHS directive 2002/95/EC.
PRODUCT SUMMARY
V
F
at 8 A
t
rr
V
RRM
< 1.2 V
55 ns
200 to 600 V
APPLICATIONS
• Output rectification and freewheeling diode in inverters,
choppers and converters
• Input rectifications where severe restrictions on conducted
EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
8 A, T
J
= 25 °C
1 A, 100 A/µs
Range
CHARACTERISTICS
Sinusoidal waveform
VALUES
8
200 to 600
170
1.2
55
- 40 to 150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
8EWF02SPbF
8EWF04SPbF
8EWF06SPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
200
400
600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
300
500
700
3
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
√t
TEST CONDITIONS
T
C
= 96 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
8
170
200
140
200
2000
A
2
s
A
2
√s
A
UNITS
Document Number: 94108
Revision: 01-Jul-09
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1
8EWF..SPbF Soft Recovery Series
Vishay High Power Products
Surface Mountable
Fast Soft Recovery Diode, 8 A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
8 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
VALUES
1.2
16
1.13
0.1
V
R
= Rated V
RRM
mA
3
UNITS
V
mΩ
V
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 8 Apk
25 A/µs
T
J
= 25 °C
VALUES
140
2.6
0.25
0.5
UNITS
ns
A
µC
di
dt
I
rr
I
FM
t
a
t
rr
t
b
Q
rr
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Soldering temperature
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient (PCB mount)
Approximate weight
0.03
Marking device
Case style TO-252AA (D-PAK)
8EWF06S
oz.
SYMBOL
T
J
, T
Stg
T
S
R
thJC
R
thJA
(1)
TEST CONDITIONS
VALUES
- 40 to 150
UNITS
°C
For 10 seconds
DC operation
240
2.5
°C/W
50
1
g
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
www.vishay.com
2
For technical questions, contact:
diodestech@vishay.com
Document Number: 94108
Revision: 01-Jul-09
8EWF..SPbF Soft Recovery Series
Surface Mountable
Vishay High Power Products
Fast Soft Recovery Diode, 8 A
Maximum Allowable Case T
emperature (°C)
140
130
120
110
100
90
80
70
60
0
1
2
3
30°
8EWF Series
..S
R
thJC
(DC) = 2.5 °C/ W
Maximum Average F
orward Power Los (W)
s
150
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
Average Forward Current (A)
8E
WF..SS
eries
T
J
= 150°C
DC
180°
120°
90°
60°
30°
Conduction Angle
RMSLimit
Conduction Period
60°
90°
120°
180°
4
5
6
7
8
9
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
Maximum Allowable Case T
emperature (°C)
Peak Half S Wave F
ine
orward Current (A)
150
140
130
120
110
100
90
80
70
0
2
4
6
8
10
12
14
Average Forward Current (A)
Conduction Period
200
175
150
125
100
75
50
1
8EWF..S S
eries
R
thJC
(DC) = 2.5 °C/ W
At Any Ra ted Load Condition And With
Rated V
RRM
Ap plied Following S
urge .
Initial T = 150°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
30°
60°
90°
120°
180°
8E
WF..SS
eries
DC
10
100
Numb er Of Eq ua l Amp litude Ha lf Cyc le Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average Forward Power Loss (W)
Peak Half S Wave F
ine
orward Current (A)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
Average Forward Current (A)
Conduction Angle
200
180
160
140
120
100
80
60
180°
120°
90°
60°
30°
RMS Limit
Maximum Non Repetitive S
urge Current
Versus Pulse T in Duration.
ra
Initial T = 150°C
J
No Voltage Reap plied
Rated V
RRM
Reapplied
8E
WF..SS
eries
T
J
= 150°C
8E
WF..S S
eries
40
0.01
0.1
Pulse T in Duration (s)
ra
1
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94108
Revision: 01-Jul-09
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
3
8EWF..SPbF Soft Recovery Series
Vishay High Power Products
Surface Mountable
Fast Soft Recovery Diode, 8 A
Maximum Reverse R
ecovery Charge - Qrr (µC)
1.4
1.2
1
10 A
100
Ins
tantaneous F
orward Current (A)
8EWF..S S
eries
T
J
= 25 °C
I
FM
= 20 A
0.8
8A
10
T
J
25°C
=
T
J
= 150°C
0.6
0.4
0.2
0
0
40
80
120
160
5A
2A
1A
8E ..SS
WF
eries
1
0.5
1
1.5
2
2.5
3
200
Instantaneous Forward Voltage (V)
Rate Of Fall Of F
orward Current - dI/ dt (A/ µs
)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
Maximum R
everse Recovery Charge - Qrr (µC)
Maximum R
everse R
ecovery T
ime - T (µs)
rr
0.4
8EWF..SS
eries
T
J
= 25 °C
0.3
I
FM
= 20 A
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
40
80
120
160
200
Rate Of Fall Of F
orward Current - dI/ dt (A/ µs)
2A
1A
5A
8EWF..SS
eries
T
J
= 150 °C
I
FM
= 20 A
10 A
8A
0.2
10 A
8A
5A
0.1
2A
1A
0
0
40
80
120
160
200
R
ate Of F Of Forward Current - dI/ dt (A/ µs
all
)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Maximum R
everse R
ecovery Current - Irr (A)
Maximum R verse Recovery T
e
ime - T (µs)
rr
0.4
8E
WF..S S
eries
T
J
= 150 °C
0.3
I
FM
= 20 A
16
14
12
8A
8EWF..SS
eries
T
J
= 25 °C
I
FM
= 20 A
10 A
10
5A
0.2
10 A
8A
5A
8
2A
6
4
2
0
0
40
80
120
160
200
Rate Of F Of F
all
orward Current - dI/ dt (A/ µs)
1A
0.1
2A
1A
0
0
40
80
120
160
200
R
ate Of Fall Of Forward Current - dI/ dt (A/ µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
www.vishay.com
4
For technical questions, contact:
diodestech@vishay.com
Document Number: 94108
Revision: 01-Jul-09
8EWF..SPbF Soft Recovery Series
Surface Mountable
Vishay High Power Products
Fast Soft Recovery Diode, 8 A
Maximum Reverse R
ecovery Current - Irr (A)
20
18
16
14
12
10
8
6
4
2
0
0
40
80
120
160
200
R
ate Of Fall Of F
orward Current - dI/ dt (A/ µs)
8EWF..SS
eries
T
J
= 150 °C
I
FM
= 20 A
10 A
8A
5A
2A
1A
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
T
ransient Thermal Impedance Z
thJC
(°C/ W)
10
S
teady S
tate Value
(DC Operation)
1
D=
D=
D=
D=
D=
0.50
0.33
0.25
0.17
0.08
S
ingle Pulse
8EWF S
..S eries
0.1
0.0001
0.001
0.01
0.1
S
quare Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Document Number: 94108
Revision: 01-Jul-09
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
5
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