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8TQ080GSPBF_10

Description
8 A, 80 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size109KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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8TQ080GSPBF_10 Overview

8 A, 80 V, SILICON, RECTIFIER DIODE

VS-8TQ080GSPbF, VS-8TQ100GSPbF
Vishay High Power Products
Schottky Rectifier, 8 A
FEATURES
Base
cathode
2
D
2
PAK
1
N/C
3
Anode
175 °C T
J
operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Halogen-free according to IEC 61249-2-21 definition
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
PRODUCT SUMMARY
I
F(AV)
V
R
8A
80 V/100 V
DESCRIPTION
The VS-8TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 μs sine
8 Apk, T
J
= 125 °C
Range
VALUES
8
80/100
850
0.58
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-8TQ080GSPbF
80
VS-8TQ100GSPbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 157 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated
load condition and with
rated V
RRM
applied
VALUES
8
850
A
230
7.50
0.5
mJ
A
UNITS
A
T
J
= 25 °C, I
AS
= 0.5 A, L = 60 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 94264
Revision: 23-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1

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