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IRF9383MPBF

Description
Isolation Switch for Input Power or Battery Application
File Size260KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRF9383MPBF Overview

Isolation Switch for Input Power or Battery Application

IRF9383MPbF
DirectFET
®
P-Channel Power MOSFET
‚
Applications
l
Isolation Switch for Input Power or Battery Application
l
High Side Switch for Inverter Applications
Typical values (unless otherwise specified)
V
DSS
Q
g tot
67nC
V
GS
Q
gd
29nC
R
DS(on)
Q
gs2
9.4nC
R
DS(on)
Q
oss
59nC
-30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V
Features and Benefits
l
Environmentaly Friendly Product
l
RoHs Compliant Containing no Lead,
Q
rr
315nC
V
gs(th)
-1.8V
no Bromide and no Halogen
l
Common-Drain P-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
S
D
G
S
D
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

SQ
SX
ST
MQ
MX
MT
MP
MC
DirectFET™ ISOMETRIC
Description
The IRF9383MTRPbF combines the latest HEXFET
®
P-Channel Power MOSFET Silicon technology with the advanced DirectFET
®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET
®
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
®
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Orderable part number
IRF9383MTRPbF
IRF9383MTR1PbF
Package Type
DirectFET Medium Can
DirectFET Medium Can
®
®
Standard Pack
Form
Tape and Reel
Tape and Reel
Quantity
4800
1000
Note
"TR1" suffix EOL notice #264
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
12
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
g
e
e
f
-VGS, Gate-to-Source Voltage (V)
-30
±20
-22
-17
-160
-180
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
20
40
60
80
A
10
8
6
4
2
0
2
4
6
8
10
ID = -22A
ID= -18A
VDS= -24V
VDS= -15V
VDS= -6.0V
TJ = 125°C
T J = 25°C
12
14
16
18
20
100 120 140 160 180
-VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:

Click on this section to link to the appropriate technical paper.
‚
Click on this section to link to the DirectFET
®
Website.
ƒ
Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
„
T
C
measured with thermocouple mounted to top (Drain) of part.
…
Repetitive rating; pulse width limited by max. junction temperature.
1
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
June 2, 2015

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