SGA5386ZSQ datasheet, PDF - EEWORLD Datasheet

SGA5386ZDC

to 5000MHz,

Cascadable

SiGe HBT

MMIC Ampli-

fier

SGA5386Z

DC to 5000MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

Package: SOT-86

Product Description

The SGA5386Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-

figuration featuring one-micron emitters provides high F

T

and excellent thermal per-

formance. The heterojunction increases breakdown voltage and minimizes leakage

current between junctions. Cancellation of emitter junction non-linearities results in

higher suppression of intermodulation products. Only two DC-blocking capacitors, a

bias resistor, and an optional RF choke are required for operation.

Features



High Gain: 14.9dB at

1950MHz

Cascadable 50Ω

Operates from Single Supply

Low Thermal Resistance

Package

PA Driver Amplifier

Cellular, PCS, GSM, UMTS

IF Amplifier

Wireless Data, Satellite

Optimum Technology

Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

Gain (dB)

15

IRL

Applications

Gain & Return Loss vs. Frequency



20

GAIN

V

D

= 3.6 V, I

D

= 60 mA (Typ.)

0

-10

-20

Return Loss (dB)



10

5

ORL



SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS

T

L

=+25ºC

-30

-40

0

1

2

3

Frequency (GHz)

4

5

Parameter

Small Signal Gain

Min.

15.2

Specification

Typ.

16.6

14.9

14.0

17.0

14.7

32.0

29.0

5000

Max.

18.3

Unit

dB

dBm

MHz

850MHz

1950MHz

2400MHz

850MHz

1950MHz

850MHz

1950MHz

>10dB

Condition

Output Power at 1dB Compression

Output Third Intercept Point

Bandwidth Determined by Return

Loss

Input Return Loss

18.5

dB

1950MHz

Output Return Loss

30.0

dB

1950MHz

Noise Figure

4.0

dB

1950MHz

Device Operating Voltage

3.1

3.6

4.1

V

Device Operating Current

54

60

66

mA

Thermal Resistance

97

°C/W

(Junction - Lead)

Test Conditions: V

S

=8V, I

D

=60mA Typ., OIP

3

Tone Spacing=1MHz, P

OUT

per tone=0dBm, R

BIAS

=75Ω, T

L

=25°C, Z

S

=Z

L

=50Ω

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

DS100915

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

1 of 7

SGA5386Z

Absolute Maximum Ratings

Parameter

Max Device Current (I

D

)

Max Device Voltage (V

D

)

Max RF Input Power

Max Junction Temp (T

J

)

Operating Temp Range (T

L

)

Max Storage Temp

Rating

120

5

+16

+150

-40 to +85

+150

Unit

mA

V

dBm

°C

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

I

D

V

D

<(T

J

-T

L

)/R

TH

, j-l

Typical Performance at Key Operating Frequencies

Parameter

Unit

100

MHz

500

MHz

850

MHz

1950

MHz

2400

MHz

14.0

27.0

13.6

15.8

33.4

21.2

4.1

3500

MHz

12.5

Small Signal Gain

dB

17.6

17.2

16.6

14.7

Output Third Order Intercept Point

dBm

32.0

29.0

Output Power at 1dB Compression

dBm

17.0

14.7

Input Return Loss

dB

26.4

19.6

16.9

18.5

Output Return Loss

dB

27.3

29.5

31.0

30.0

Reverse Isolation

dB

20.6

20.8

21.1

21.2

Noise Figure

dB

3.4

3.5

4.0

Test Conditions: V

S

=8V, I

D

=60mA Typ., OIP

3

Tone Spacing=1MHz, P

OUT

per tone=0dBm, R

BIAS

=75Ω, T

L

=25°C, Z

S

=Z

L

=50Ω

11.6

19.1

19.8

2 of 7

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS100915

SGA5386Z

OIP

3

vs. Frequency

V

D

= 3.6 V, I

D

= 60 mA (Typ.)

40

35

OIP

3

(dBm)

P

1dB

(dBm)

20

18

16

14

12

P

1dB

vs. Frequency

V

D

= 3.6 V, I

D

= 60 mA (Typ.)

30

25

T

L

=+25ºC

20

0

0.5

1

1.5

2

Frequency (GHz)

2.5

3

T

L

=+25ºC

10

0

0.5

1

1.5

2

Frequency (GHz)

2.5

3

Noise Figure vs. Frequency

V

D

= 3.6 V, I

D

= 60 mA (Typ.)

7

6

5

4

3

2

0

0.5

1

1.5

2

Frequency (GHz)

Noise Figure (dB)

T

L

=+25ºC

2.5

3

DS100915

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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SGA5386Z

|

S

21

|

vs. Frequency

20

15

S

21

(dB)

|

S

11

|

vs. Frequency

0

-10

S

11

(dB)

-20

-30

V

D

= 3.6 V, I

D

= 60 mA (Typ.)

V

D

= 3.6 V, I

D

= 60 mA (Typ.)

10

5

T

L

0

1

2

3

Frequency (GHz)

4

+25°C

-40°C

+85°C

T

L

-40

5

+25°C

-40°C

+85°C

0

1

2

3

Frequency (GHz)

4

5

|

S

12

|

vs. Frequency

-12

-15

-18

-21

|

S

22

|

vs. Frequency

0

-10

S

22

(dB)

-20

-30

V

D

= 3.6 V, I

D

= 60 mA (Typ.)

V

D

= 3.6 V, I

D

= 60 mA (Typ.)

S

12

(dB)

T

L

-24

0

1

2

3

Frequency (GHz)

4

+25°C

-40°C

+85°C

T

L

-40

5

+25°C

-40°C

+85°C

0

1

2

3

Frequency (GHz)

4

5

4 of 7

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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS100915

SGA5386Z

Application Schematic

Frequency (Mhz)

V

S

R

BIAS

1 uF

1000

pF

Reference

Designator

500

850

1950

2400

3500

C

B

C

D

220 pF

100 pF

68 nH

100 pF

68 pF

33 nH

68 pF

22 pF

22 nH

56 pF

22 pF

18 nH

39 pF

15 pF

15 nH

C

D

L

C

L

C

RF in

C

B

4

1

SGA5386Z

3

2

C

B

Recommended Bias Resistor Values for I

D

=60mA

R

BIAS

=( V

S

-V

D

) / I

D

RF out

Supply Voltage(V

S

)

R

BIAS

6V

39

8V

75

10 V

110

12 V

150

Note: R

BIAS

provides DC bias stability over temperature.

Evaluation Board Layout

V

S

R

BIAS

1 uF

1000 pF

Mounting Instructions

1. Use a large ground pad area under device pins 2

and 4 with many plated through-holes as shown.

2. We recommend 1 or 2 ounce copper. Measurements

for this data sheet were made on a 31 mil thick FR-4

board with 1 ounce copper on both sides.

L

C

D

C

B

A53

C

B

DS100915

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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