2N7278D datasheet, PDF - EEWORLD Datasheet

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2N7278D: DescriptionPower Field-Effect Transistor, 4A I(D), 250V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF; CategoryDiscrete semiconductor The transistor; File Size40KB，4 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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2N7278D Overview

Power Field-Effect Transistor, 4A I(D), 250V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

2N7278D Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	RADIATION HARDENED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	0.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	25 W
Maximum pulsed drain current (IDM)	12 A
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Maximum off time (toff)	270 ns
Maximum opening time (tons)	120 ns
Base Number Matches	1

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S E M I C O N D U C T O R

REGISTRATION PENDING

Currently Available as FRL234(D, R, H)

November 1994

2N7278D, 2N7278R

2N7278H

Radiation Hardened

N-Channel Power MOSFETs

Package

TO-205AF

Features

• 4A, 250V, RDS(on) = 0.700Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma

Meets Pre-Rad Speciﬁcations to 100KRAD(Si)

Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

Performance Permits Limited Use to 3000KRAD(Si)

Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

Survives 2E12 Typically If Current Limited to IDM

4.0nA Per-RAD(Si)/sec Typically

Pre-RAD Speciﬁcations for 1E13 Neutrons/cm

Usable to 1E14 Neutrons/cm

Typically Survives 1E5ions/cm

Having an

LET

≤

35MeV/mg/cm

and a Range

≥

30µm at 80% BVDSS

• Gamma Dot

• Photo Current

• Neutron

• Single Event

Description

The Harris Semiconductor Sector has designed a series of SECOND GENERA-

TION hardened power MOSFETs of both N and P channel enhancement types

with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron

hardness ranging from 1E13n/cm

for 500V product to 1E14n/cm

for 100V prod-

uct. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current lim-

iting and 2E12 with current limiting. Heavy ion survival from signal event drain

burn-out exists for linear energy transfer (LET) of 35 at 80% of rated voltage.

This MOSFET is an enhancement-mode silicon-gate power ﬁeld effect transistor of

the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n

)

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.

Reliability screening is available as either non TX (commercial), TX equivalent of

MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-

19500. Contact the Harris Semiconductor High-Reliability Marketing group for any

desired deviations from the data sheet.

Symbol

Absolute Maximum Ratings

(TC = +25

C) Unless Otherwise Speciﬁed

2N7278D, R, H

250

±20

0.20

-55 to +150

300

UNITS

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

Drain-Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current

TC = +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC = +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

Maximum Power Dissipation

TC = +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

TC = +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.

Harris Corporation 1992

File Number

3229

12-31

2N7278D Related Products

	2N7278D	2N7278H	2N7278R
Description	Power Field-Effect Transistor, 4A I(D), 250V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	Power Field-Effect Transistor, 4A I(D), 250V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	Power Field-Effect Transistor, 4A I(D), 250V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Other features	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V	250 V	250 V
Maximum drain current (ID)	4 A	4 A	4 A
Maximum drain-source on-resistance	0.7 Ω	0.7 Ω	0.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF	TO-205AF	TO-205AF
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	25 W	25 W	25 W
Maximum pulsed drain current (IDM)	12 A	12 A	12 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON
Maximum off time (toff)	270 ns	270 ns	270 ns
Maximum opening time (tons)	120 ns	120 ns	120 ns
Base Number Matches	1	1	1
Is it Rohs certified?	-	incompatible	incompatible
Maximum drain current (Abs) (ID)	-	4 A	4 A
JESD-609 code	-	e0	e0
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Maximum power dissipation(Abs)	-	25 W	25 W
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED

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