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US2A

Description
2 A, 50 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size454KB,4 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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US2A Overview

2 A, 50 V, SILICON, RECTIFIER DIODE

MCC
Features
TM
  
Micro

Commercial Components
 
























  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
US2A
THRU
US2M
2 Amp Ultra Fast
Rectifier
50 t o 1000 Volts
DO-214AA
(SMB) (LEAD
FRAME)
A
Glass Passivated Chip
Super
 

      
Fast

Switching For High Efficiency







Low

Forward Voltage Drop And High Current Capability




 









  
Low

Reverse

Leakage Current
 
     
Free Finish/Rohs Compliant (Note1) ("P"Suffix designates

Lead
Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings
Operating Temperature: -50°C to +150°C
Storage Temperature: -50°C to +150°C
Maximum Thermal Resistance; 20
°C/W
Junction To Lead
MCC
Catalog
Number
US2A
US2B
US2C
US2D
US2G
US2J
US2K
US2M
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
150V
200V
400V
600V
800V
1000V
I
F(AV)
I
FSM
2.0A
50A
Maximum
RMS
Voltage
35V
70V
105V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
150V
200V
400V
600V
800V
1000V
Cathode Band
B
US2A
US2B
US2C
US2D
US2G
US2J
US2K
US2M
C
F
H
D
G
E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
US2A-2D
US2G
US2J-2M
T
L
= 110°C
8.3ms, half sine
DIM
A
B
C
D
E
F
G
H
INCHES
MIN
.160
.130
.006
.030
.205
.079
.077
.002
MAX
.180
.155
.012
.060
.220
.103
.087
.008
DIMENSIONS
MM
MIN
4.06
3.30
0.15
0.76
5.21
2.01
1.96
0.05
MAX
4.57
3.94
0.31
1
..52
5.59
2.62
2.21
0.20
NOTE
V
F
1.0V
1.4V
1.7V
I
FM
=
2.0A;
T
J
= 25°C
SUGGESTED SOLDER
PAD LAYOUT
0.106”
MAX
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
I
R
5uA
350uA
T
J
= 25°C
T
J
= 125°C
0.083”
MIN
Maximum Reverse
Recovery Time
US2A-2G
US2J-2M
T
rr
C
J
50ns
100ns
28pF
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
Measured at
1.0MHz, V
R
=4.0V
0.050”
MIN
Typical Junction
Capacitance
*Pulse test: Pulse width 300
µsec,
Duty cycle 1%
Note: 1.
High Temperature Solder Exemptions Applied, see EU Directive Annex 7.
Revision: A
www.mccsemi.com
1 of 4
2011/01/01

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US2A US2B US2C US2D US2G US2J US2K US2M
Description 2 A, 50 V, SILICON, RECTIFIER DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE 2 A, 50 V, SILICON, RECTIFIER DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 1000 V, SILICON, RECTIFIER DIODE
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