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FCH47N60NF

Description
45.8 A, 600 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB
CategoryDiscrete semiconductor    The transistor   
File Size250KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FCH47N60NF Overview

45.8 A, 600 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB

FCH47N60NF Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconductor
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-247
package instructionROHS COMPLIANT PACKAGE-3
Contacts3
Manufacturer packaging codeTO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)2926 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)45.8 A
Maximum drain current (ID)45.8 A
Maximum drain-source on-resistance0.065 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)368 W
Maximum pulsed drain current (IDM)137.4 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FCH47N60NF 600V N-Channel MOSFET, FRFET
SupreMOS
TM
FCH47N60NF
N-Channel MOSFET, FRFET
600V, 47A, 65mΩ
Features
• R
DS(on)
= 57.5mΩ (Typ.) @ V
GS
= 10V, I
D
= 23.5A
• Ultra Low Gate Charge (Typ. Q
g
= 121nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
January 2011
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
G D
S
TO-247
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
- Derate above 25 C
o
o
Parameter
Ratings
600
±30
o
Units
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/
o
C
o
o
-Continuous (T
C
= 25 C)
-Continuous (T
C
=
- Pulsed
100
o
C)
(Note 1)
(Note 2)
45.8
28.9
137.4
2926
15.3
3.7
100
(Note 3)
50
368
2.94
-55 to +150
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
Ratings
0.34
0.24
40
o
Units
C/W
©2011 Fairchild Semiconductor Corporation
FCH47N60NF Rev. A1
1
www.fairchildsemi.com
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