Naina Semiconductor Ltd.
emiconductor
Standard Recovery Diodes (Stud Version)
Features
•
Diffused Series
•
Industrial grade
•
Available in Normal and Reverse polarity
•
Metric and UNF thread type
12NS(R)
12
Electrical Specifications
(T
E
= 25
0
C, unless otherwise noted)
Symbol
I
F(AV)
V
FM
I
FSM
I
FRM
It
2
Parameters
Maximum avg. forward current @ T
E
=
O
150 C
Maximum peak forward voltage drop
@ rated I
F(AV)
Maximum peak one cycle (non-rep)
surge current @ 10 msec
Maximum peak repetitive surge
current
2
rep)
Maximum I t rating (non-rep) for 5 to
10 msec
Values
12
1.2
250
60
250
Units
A
V
A
A
A sec
2
DO-203AA (DO-4)
203AA (DO
Electrical Ratings
(T
E
= 25
0
C, unless otherwise noted)
Type
number
Voltage
Code
10
20
40
60
12NS(R)
80
100
120
140
160
V
RRM,
Maximum
repetitive peak
reverse voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
V
R(RMS),
Maximum
RMS reverse
voltage
(V)
70
140
280
420
560
700
840
980
1120
V
R,
Maximum
DC blocking
voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
Recommended RMS
working voltage
(V)
40
80
160
240
320
400
480
560
640
100
I
R(AV),
Maximum
avg. reverse
leakage current
(µA)
Naina Semiconductor Ltd.
emiconductor
Thermal & Mechanical Specifications
(T
E
= 25
0
C, unless otherwise noted)
Symbol
R
th(JC)
T
J
T
stg
W
Parameters
Maximum thermal resistance, junction to case
Operating junction temperature range
Storage temperature
Mounting torque (non-lubricated threads)
lubricated
Approximate allowable weight
12NS(R)
12
Values
2
-65 to 150
65
-65 to 150
65
0.14 (min) - 0.17 (max)
7
Units
C/W
O
O
O
C
C
g
ALL DIMENSIONS IN MM
Embedded System
京公网安备 11010802033920号
EEWORLD
