HMC-ALH313
v02.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 27 - 33 GHz
Features
Noise Figure: 3 dB
Gain: 20 dB
P1dB Output Power: +12 dBm
Supply Voltage: +2.5V @ 52 mA
Die Size: 1.80 x 0.73 x 0.1 mm
1
LOW NOISE AMPLIFIERS - CHIP
Typical Applications
This HMC-ALH313 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• Test Equipment & Sensors
• Military & Space
Functional Diagram
General Description
The HMC-ALH313 is a three stage GaAs MMIC
HEMT Low Noise Amplifier die which operates bet-
ween 27 and 33 GHz. The amplifier provides 20 dB
of gain, a 3 dB noise figure and +12 dBm of output
power at 1 dB gain compression while requiring only
52 mA from a +2.5V supply voltage. This amplifier die
is ideal for use as a LNA or driver amplifier, and may
be easily integrated into Multi-Chip-Modules (MCMs)
due to its small size (1.30 mm2) .
Electrical Specifi cations
[1]
,
T
A
= +25° C, Vdd= 2.5V, Idd = 52mA
[2]
Parameter
Frequency Range
Gain
Gain Variation over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression
Supply Current
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.3V) to achieve Idd
total
= 52 mA
10
18
Min.
Typ.
27 - 33
20
0.03
3
12
14
12
52
3.5
Max.
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
mA
1 - 150
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH313
v02.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 27 - 33 GHz
Linear Gain vs. Frequency
25
Noise Figure vs. Frequency
5
1
LOW NOISE AMPLIFIERS - CHIP
1 - 151
20
NOISE FIGURE (dB)
26
27
28
29
30
31
32
33
34
GAIN (dB)
4
15
3
10
2
5
1
0
FREQUENCY (GHz)
0
26
27
28
29
30
31
32
33
34
FREQUENCY (GHz)
Input Return Loss vs. Frequency
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
26
27
28
29
30
31
32
33
34
FREQUENCY (GHz)
Output Return Loss vs. Frequency
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
26
27
28
29
30
31
32
33
34
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH313
v02.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 27 - 33 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Absolute Maximum Ratings
Drain Bias Voltage
Gate Bias Voltage
RF Input Power
Channel Temperature
Storage Temperature
Operating Temperature
+5 Vdc
-1 to +0.3 Vdc
-3 dBm
180 °C
-65 to +150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
GP-5 (Gel Pack)
Alternate
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
1 - 152
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH313
v02.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 27 - 33 GHz
Pad Descriptions
Pad Number
1
2
Function
RFIN
RFOUT
Description
This pad is AC coupled
and matched to 50 Ohms.
This pad is AC coupled
and matched to 50 Ohms.
Power Supply Voltage for the amplifier. See assembly for
required external components.
Interface Schematic
1
LOW NOISE AMPLIFIERS - CHIP
1 - 153
3
Vdd
4
Vgg
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
ing Procedure” application note. See assembly for required
external components.
Die bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH313
v02.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 27 - 33 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Assembly Diagram
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
1 - 154
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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