HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Typical Applications
Features
P1dB Output Power: +18 dBm
Gain: 12.5 dB
Output IP3: +27 dBm
Supply Voltage: +8V @ 80 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.42 x 0.1 mm
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
The HMC562 wideband driver is ideal for:
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
General Description
The HMC562 is a GaAs MMIC PHEMT Distributed
Driver Amplifier die which operates between 2 and
35 GHz. The amplifier provides 12.5 dB of gain,
+19 dBm output IP3 and +12 dBm of output power
at 1 dB gain compression while requiring 80 mA
from a +8V supply. The HMC562 is ideal for EW,
ECM and radar driver amplifier applications. The
HMC562 amplifier I/O’s are DC blocked and internally
matched to 50 Ohms facilitating integration into Multi-
Chip-Modules (MCMs). All data is taken with the chip
connected via two 0.075mm (3 mil) ribbon bonds of
minimal length 0.31mm (12 mils).
Electrical Specifi cations,
T
A
= +25° C, Vdd= +8V, Idd= 80 mA*
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 8V, Vgg = -0.8V Typ.)
15
9.5
Min.
Typ.
2.0 - 15.0
12.5
±0.4
0.01
14
16
18
21.5
27
3
80
100
14
0.02
8.5
Max.
Min.
Typ.
15.0 - 27.0
12
±0.35
0.01
13
15
17
20
24
3.5
80
100
10
0.02
7
Max.
Min.
Typ.
27.0 - 35.0
10
±1.3
0.02
10
12
14
16
22
5
80
100
0.03
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
* Adjust Vgg between -2 to 0V to achieve Idd= 80 mA typical.
2 - 34
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Gain & Return Loss
15
10
5
RESPONSE (dB)
0
-5
-10
-15
-20
-25
0
5
10
15
20
25
30
35
40
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
35
FREQUENCY (GHz)
+25C
+85C
-55C
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2 - 35
Input Return Loss vs. Temperature
0
+25C
+85C
-55C
Output Return Loss vs. Temperature
0
+25C
+85C
-55C
-5
RETURN LOSS (dB)
GAIN (dB)
RETURN LOSS (dB)
25
30
35
-5
-10
-10
-15
-15
-20
-20
-25
0
5
10
15
20
FREQUENCY (GHz)
-25
0
5
10
15
20
25
30
35
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
0
4
8
12
16
20
FREQUENCY (GHz)
Noise Figure vs. Temperature
7
6
NOISE FIGURE (dB)
+25C
+85C
-55C
5
4
3
2
1
0
0
5
10
15
+25C
+85C
-55C
20
25
30
35
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
P1dB vs. Temperature
24
22
20
P1dB (dBm)
18
16
14
12
10
0
5
10
15
20
25
30
35
FREQUENCY (GHz)
+25C
+85C
-55C
Psat vs. Temperature
24
22
20
Psat (dBm)
18
16
14
12
10
0
5
10
15
20
25
30
35
FREQUENCY (GHz)
+25C
+85C
-55C
Output IP3 vs. Temperature
40
Gain, Power & Output IP3 vs.
Supply Voltage @ 10 GHz, Fixed Vgg
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
30
35
25
Gain
P1dB
Psat
IP3
IP3 (dBm)
30
20
25
+25C
+85C
-55C
15
20
15
0
5
10
15
20
25
30
35
FREQUENCY (GHz)
10
7.5
8
Vdd Supply Voltage (V)
8.5
Power Compression @ 10 GHz
24
Pout (dBm), GAIN (dB), PAE (%)
20
16
12
8
4
0
-10 -8
Pout
Gain
PAE
Power Compression @ 30 GHz
20
Pout (dBm), GAIN (dB), PAE (%)
Pout
Gain
PAE
16
12
8
4
-6
-4
-2
0
2
4
6
8
10 12 14
16
0
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
INPUT POWER (dBm)
INPUT POWER (dBm)
2 - 36
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Typical Supply Current vs. Vdd
Vdd (V)
+7.5
+8
+8.5
Idd (mA)
79
80
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)(Vdd = +10 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 26 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+10 Vdc
-2.0 to 0 Vdc
+23 dBm
175 °C
2.3 W
39 °C/W
-65 to +150 °C
-55 to +85 °C
Class 1A
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2 - 37
81
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Outline Drawing
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
Die Packaging Information
[1]
Standard
GP-2
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. DIE THICKNESS IS 0.004 (0.100)
3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE IS ±.002
2 - 38
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Analog electronics
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