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2N6794TX

Description
Power Field-Effect Transistor, 1.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
CategoryDiscrete semiconductor    The transistor   
File Size151KB,5 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric View All

2N6794TX Overview

Power Field-Effect Transistor, 1.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

2N6794TX Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknow
Other featuresRADIATION HARDENED
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)1.5 A
Maximum drain-source on-resistance3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)40 pF
JEDEC-95 codeTO-205AF
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Maximum power consumption environment20 W
Maximum pulsed drain current (IDM)6.5 A
Certification statusNot Qualified
GuidelineMILITARY STANDARD (USA)
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)90 ns
Maximum opening time (tons)70 ns
Base Number Matches1
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