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HMC469MS8GE

Description
SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz
CategoryWireless rf/communication    Radio frequency and microwave   
File Size299KB,8 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Environmental Compliance
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HMC469MS8GE Overview

SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz

HMC469MS8GE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerHittite Microwave(ADI)
package instructionROHS COMPLIANT, ULTRA SMALL, PLASTIC, MSOP-8
Reach Compliance Codeunknow
ECCN codeEAR99
Characteristic impedance50 Ω
structureCOMPONENT
Gain7.5 dB
Maximum input power (CW)17 dBm
JESD-609 codee3
Installation featuresSURFACE MOUNT
Number of functions2
Number of terminals8
Maximum operating frequency5000 MHz
Minimum operating frequency
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeTSSOP8,.19
power supply8 V
RF/Microwave Device TypesWIDE BAND LOW POWER
surface mountYES
technologyBIPOLAR
Terminal surfaceMatte Tin (Sn)
HMC469MS8G
/
469MS8GE
v01.0605
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
Features
P1dB Output Power: +18 dBm
Gain: 15 dB
Output IP3: +34 dBm
Supply (Vs): +5V to +12V
14.9 mm
2
Ultra Small 8 Lead MSOP
Typical Applications
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
The HMC469MS8G /HMC469MS8GE is a dual
RF/IF gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
General Description
Functional Diagram
The HMC469MS8G & HMC469MS8GE are SiGe HBT
Dual Channel Gain Block MMIC SMT amplifiers
covering DC to 5 GHz. These versatile products
contain two gain blocks, packaged in a single 8 lead
plastic MSOP, for use as either separate cascadable
50 Ohm RF/IF gain stages, LO or PA drivers or with
both amplifiers combined utilizing external 90°
hybrids to create a high linearity driver amplifier. Each
amplifier in the HMC469MS8G(E) offers 15 dB of
gain, +18 dBm P1dB with a +34 dBm output IP3 at
850 MHz while requiring only 75 mA from a single
positive supply. The combined dual amplifier circuit
delivers up to +20 dBm P1dB with +35 dBm OIP3
for specific application bands through 4 GHz.
Electrical Specifi cations,
Vs= 8.0 V, Rbias= 51 Ohm, T
A
= +25° C
Parameter
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5 GHz
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.5 GHz
2.5 - 4.0 GHz
4.0 - 5.0 GHz
DC - 3.0 GHz
3.0 - 5.0 GHz
Min.
12.5
11
10
9
7.5
Typ.
15
13
12
11
9.5
0.008
12
10
8
14
10
8
6
18
18
16
14
12.5
11
34
30
25
23
4.0
5.0
75
Max.
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Gain
Gain Variation Over Temperature
Input Return Loss
0.012
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
15
13
11
9.5
8
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output. All specifi cations refer to a single amplifi er.
9 - 44
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

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