APT50GF60BR
APT50GF60BR
600V
75A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
TO-247
C
• Low Forward Voltage Drop
• Low Tail Current
• Avalanche Rated
MAXIMUM RATINGS
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
G
C
E
G
E
All Ratings: T
C
= 25°C unless otherwise specified.
APT50GF60BR
UNIT
600
600
±20
75
50
160
100
75
300
-55 to 150
300
°C
mJ
Watts
Amps
Volts
Collector-Gate Voltage (R
GE
= 20KW)
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 90°C
Pulsed Collector Current
1
@ T
C
= 25°C
RBSOA Clamped Inductive Load Current @ R
g
= 11W T
C
= 125°C
Single Pulse Avalanche Energy
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
2
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.0mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 700µA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
600
4.5
5.5
2.1
2.2
6.5
2.7
2.8
0.5
5.0
6-2000
052-6207
Rev E
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
I
CES
I
GES
mA
nA
±100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT50GF60BR
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.66V
CES
I
C
= I
C2
Resistive Switching (25°C)
V
GE
= 15V
V
CC
= 0.66V
CES
I
C
= I
C2
R
G
= 10W
MIN
TYP
MAX
UNIT
2250
255
155
175
18
100
29
118
150
190
28
ns
nC
pF
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Inductive Switching (150°C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10W
T
J
= +150°C
75
265
185
1.8
2.4
4.2
ns
mJ
Inductive Switching (25°C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10W
T
J
= +25°C
V
CE
= 20V, I
C
= I
C2
30
80
240
43
3.6
6
mJ
S
ns
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
QJC
R
QJA
W
T
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.42
40
0.22
oz
gm
Package Weight
6.1
10
lb•in
N•m
Torque
Mounting Torque (
using a 6-32 or 3mm Binding Head Machine Screw
)
1.1
6-2000
1
2
3
Repetitive Rating: Pulse width limited by maximum junction temperature.
I
C
= I
C2
, R
GE
= 25
W
, L = 100µH, T
j
= 25°C
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6207
Rev E
APT50GF60BR
100
I
C
, COLLECTOR CURRENT (AMPERES)
I
C
, COLLECTOR CURRENT (AMPERES)
100
V
GE
=13, 15 & 17V
V
GE
=13, 15 & 17V
80
11V
60
10V
40
9V
20
8V
7V
0
0
4
8
12
16
20
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2, Typical Output Characteristics (T
J
= 150°C)
150
I
C
, COLLECTOR CURRENT (AMPERES)
250µSec. Pulse Test
V
GE
= 15V
80
11V
60
40
10V
20
9V
8V
0
4
8
12
16
20
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (T
J
= 25°C)
100
I
C
, COLLECTOR CURRENT (AMPERES)
0
100
80
T
C
=-55°C
T
C
=+25°C
T
C
=+150°C
60
10
OPERATION
HERE
LIMITED
BY
VCE (SAT)
100µS
40
1mS
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
1
10
100
600
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4, Maximum Safe Operating Area
1
20
10mS
0
1
2
3
4
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
V
GE
, GATE-TO-EMITTER VOLTAGE (VOLTS)
0
10,000
20
I
C
= I
C2
T
J
= +25°C
16
C, CAPACITANCE (pF)
C
ies
f = 1MHz
V
CE
=120V
V
CE
=300V
12
1,000
C
oes
8
V
CE
=480V
4
C
res
100
0.01
0.1
1.0
10
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
1.0
Z
q
JC
, THERMAL IMPEDANCE (°C/W)
40
80
120
160
200
Q
g
, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
0
0
0.5
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
0.005
0.02
0.01
Note:
PDM
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θJC
+ TC
SINGLE PULSE
0.001
10
-5
10
-4
052-6207
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Rev E
6-2000
APT50GF60BR
4.0
I
C
, COLLECTOR CURRENT (AMPERES)
V
CE
(SAT), COLLECTOR-TO-EMITTER
SATURATION VOLTAGE (VOLTS)
80
3.5
3.0
2.5
2.0
0.5 I
C2
1.5
60
I
C1
I
C2
40
20
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
1.0
-50 -25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8, Typical V
CE
(SAT) Voltage vs Junction Temperature
1.2
SWITCHING ENERGY LOSSES (mJ)
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
Figure 9, Maximum Collector Current vs Case Temperature
10
V
CC
= 0.66 V
CES
V
GE
= +15V
T
J
= +25°C
I
C
= I
C2
0 25
1.1
8
E
on
6
1.0
0.9
4
E
off
2
0.8
0.7
-50 -25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 10, Breakdown Voltage vs Junction Temperature
20
V
CC
= 0.66 V
CES
V
GE
= +15V
R
G
= 10W
20
40
60
80
100
R
G
, GATE RESISTANCE (OHMS)
Figure 11, Typical Switching Energy Losses vs Gate Resistance
2.5
SWITCHING ENERGY LOSSES (mJ)
V
CC
= 0.66 V
CES
V
GE
= +15V
T
J
= +125°C
R
G
= 10W.
0 0
TOTAL SWITCHING ENERGY LOSSES (mJ)
10
I
C1
2.0
E
off
5
I
C2
1.5
0.5 I
C2
1
1.0
E
on
0.5
0.5
-50 -25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
100
SWITCHING LOAD CURRENT (A)
10
20
30
40
50
I
C
, COLLECTOR CURRENT (AMPERES)
Figure 13, Typical Switching Energy Losses vs Collector Current
For Both:
Duty Cycle = 50%
T
J
= +125°C
T
sink
= +90°C
Gate drive as specified
Power dissapation = 83W
I
LOAD
= I
RMS
of fundamental
0 0
10
Rev E
6-2000
1
0.1
1.0
10
F, FREQUENCY (KHz)
Figure 14, Typical Load Current vs Frequency
100
1000
052-6207
APT50GF60BR
90%
A
10%
t
d
(on)
90%
V
CC
I
C
I
C
t
d
(off)
100uH
90%
V
CC
10
t
r
10%
t
f
E
on
E
off
*DRIVER SAME TYPE AS D.U.T.
V
CC
= 0.66 V
CES
E
ts
= E
on
+ E
off
A
10
I
C
D.U.T.
V
CLAMP
DRIVER*
r
cto ge
du har
In -C
e
Pr
10%
D.U.T. V
CE
(SAT)
Figure 16, Switching Loss Test Circuit and Waveforms
2
V
CE
(off)
90%
V
GE
(on)
V
CC
0.1 F
1KV
50 F
600V
R
L
=
2
.66 V
CES
I
C2
D.U.T.
10%
1
V
GE
(off)
t
d
(on)
t
r
t
d
(off)
t
f
From
Gate Drive
Circuitry
R
G
= 10 Ohms
V
CE
(on)
1
Figure 17, Resistive Switching Time Test Circuit and Waveforms
T0-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Collector
(Cathode)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Collector
(Cathode)
Emitter
(Anode)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6207
Dimensions in Millimeters and (Inches)
Rev E
6-2000
京公网安备 11010802033920号
EEWORLD
