HMC415LP3
/
415LP3E
v03.0605
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
Features
Gain: 20 dB
34% PAE @ Psat = +26 dBm
3.7% EVM @ Pout = +15 dBm
with 54 Mbps OFDM Signal
Supply Voltage: +3V
Power Down Capability
Low External Part Count
Typical Applications
This amplifier is ideal for use as a power
amplifier for 4.9 - 5.9 GHz applications:
• 802.11a WLAN
• HiperLAN WLAN
• Access Points
11
LINEAR & POWER AMPLIFIERS - SMT
• UNII & ISM Radios
Functional Diagram
General Description
The HMC415LP3 & HMC415LP3E are high effi-
ciency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power amplifiers which operate
between 4.9 and 5.9 GHz. The amplifier is pack-
aged in a low cost, leadless surface mount pack-
age with an exposed base for improved RF and
thermal performance. With a minimum of external
components, the amplifier provides 20 dB of gain,
+26 dBm of saturated power, and 34% PAE from a
+3V supply voltage. Vpd can be used for full power
down or RF output power/current control. For +15
dBm OFDM output power (64 QAM, 54 Mbps), the
HMC415LP3 & HMC415LP3E achieve an error
vector magnitude (EVM) of 3.7% meeting 802.11a
linearity requirements.
Electrical Specifi cations,
T
A
= +25° C, Vs = 3V, Vpd = 3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Error Vector Magnitude
(54 Mbps OFDM Signal @ +15 dBm Pout)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd = 0V/3V
Vpd = 3V
tOn, tOff
Icq = 200 mA
6
0.002 /
285
7
45
28
Icq = 285 mA
Icq = 200 mA
20
18
Min.
Typ.
4.9 - 5.1
20
0.04
10
10
22.5
22.0
25.5
31
29
20.5
0.05
18.5
Max.
Min.
Typ.
5.1 - 5.4
20.5
0.04
9
12
23.0
22.5
26
32
3.7
6
0.002 /
285
7
45
6
0.002 /
285
7
45
27
18
0.05
16
Max.
Min.
Typ.
5.4 - 5.9
19
0.04
8
8
21.5
21.0
24
30
0.05
Max.
Units
GHz
dB
dB /
°C
dB
dB
dBm
dBm
dBm
%
dB
mA
mA
ns
11 - 66
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC415LP3
/
415LP3E
v03.0605
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
Broadband Gain & Return Loss
25
20
15
RESPONSE (dB)
10
5
0
-5
-10
-15
-20
-25
3
4
5
6
7
8
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
24
22
20
18
16
GAIN (dB)
14
12
10
8
6
4
2
0
4.8
5
5.2
5.4
5.6
5.8
6
+25 C
+85 C
-40 C
11
LINEAR & POWER AMPLIFIERS - SMT
11 - 67
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
+25 C
RETURN LOSS (dB)
RETURN LOSS (dB)
-5
-5
+85 C
-40 C
-10
-10
-15
+25 C
+85 C
-40 C
-15
-20
4.8
5
5.2
5.4
5.6
5.8
6
-20
4.8
5
5.2
5.4
5.6
5.8
6
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
30
28
26
24
P1dB (dBm)
22
20
18
16
14
12
10
4.8
5
5.2
5.4
5.6
5.8
6
+25 C
+85 C
-40 C
Psat vs. Temperature
30
28
26
24
Psat (dBm)
22
20
18
16
14
12
10
4.8
5
5.2
5.4
5.6
5.8
6
+25 C
+85 C
-40 C
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC415LP3
/
415LP3E
v03.0605
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
Power Compression @ 5.2 GHz
36
Pout (dBm), GAIN (dB), PAE (%)
32
28
24
20
16
12
8
4
0
-12 -10
Pout (dBm)
Gain (dB)
PAE (%)
Output IP3 vs. Temperature
40
38
36
34
OIP3 (dBm)
32
30
28
26
24
22
+25 C
+85 C
-40 C
11
LINEAR & POWER AMPLIFIERS - SMT
-8
-6
-4
-2
0
2
4
6
8
10
12
20
4.8
5
5.2
5.4
5.6
5.8
6
INPUT POWER (dBm)
FREQUENCY (GHz)
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
7
6
5
4
3
+25 C
Gain & Power vs. Supply Voltage
28
Gain (dB), P1dB (dBm), Psat (dBm)
27
26
25
24
23
22
21
20
19
18
2.7
3
Vcc Supply Voltage (Vdc)
Gain
P1dB
Psat
2
1
0
4.8
5
5.2
5.4
+85 C
-40 C
5.6
5.8
6
3.3
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
Power Down Isolation vs. Temperature
0
+25 C
-10
ISOLATION (dB)
+25 C
+85 C
-40 C
-10
ISOLATION (dB)
+85 C
-40 C
-20
-20
-30
-30
-40
-40
-50
4.8
5
5.2
5.4
5.6
5.8
6
-50
4.8
5
5.2
5.4
5.6
5.8
6
FREQUENCY (GHz)
FREQUENCY (GHz)
11 - 68
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC415LP3
/
415LP3E
v03.0605
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
EVM vs. Temperature,
Icc = 240 mA, F = 5.2 GHz
8
ERROR VECTOR MAGNITUDE (%)
7
6
5
4
3
2
1
0
+25 C
+85 C
-40 C
EVM vs. Supply Current,
F = 5.2 GHz
8
ERROR VECTOR MAGNITUDE (%)
7
6
5
4
3
2
1
0
10
11
12
13
14
15
16
17
18
OUTPUT POWER (dBm)
Icc=160mA
Icc=200mA
Icc=240mA
Icc=280mA
11
10
11
12
13
14
15
16
17
18
OUTPUT POWER (dBm)
Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.2 GHz
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
1.5
1.75
2
2.25
Vpd (Vdc)
2.5
330
310
290
270
250
230
210
190
170
150
130
110
90
70
50
30
3
GAIN (dB), P1dB (dBm), Psat (dBm)
Gain
P1dB
Psat
Icc
2.75
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 69
LINEAR & POWER AMPLIFIERS - SMT
Icc (mA)
HMC415LP3
/
415LP3E
v03.0605
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage (Vpd)
RF Input Power (RFIN)(Vs = Vpd = +3.0 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 17 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
+5Vdc
+3.5 Vdc
+13 dBm
150 °C
1.105 W
59 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
11
LINEAR & POWER AMPLIFIERS - SMT
Operating Temperature
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
HMC415LP3
HMC415LP3E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
415
XXXX
415
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
11 - 70
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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