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HMC429LP4_08

Description
4450 MHz - 5000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size236KB,6 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Download Datasheet Parametric Compare View All

HMC429LP4_08 Overview

4450 MHz - 5000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER

HMC429LP4_08 Parametric

Parameter NameAttribute value
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum operating frequency5000 MHz
Minimum operating frequency4450 MHz
Processing package description4 × 4 MM, ROHS COMPLIANT, LEADLESS, Plastic, SMT, QFN-24
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
Maximum voltage standing wave ratio2
structureCOMPONENT
terminal coatingMATTE tin (394) OVER copper
Impedance characteristics50 ohm
Microwave RF TypeNARROW band low POWER
HMC429LP4
/
429LP4E
v02.0805
MMIC VCO w/ BUFFER
AMPLIFIER, 4.45 - 5.0 GHz
Features
Pout: +4.0 dBm
Phase Noise: -105 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: 3V @ 30 mA
QFN Leadless SMT Package, 16 mm
2
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier for:
• 802.11a, HiperLAN WLAN
• VSAT, UNII & Microwave Radio
• Test Equipment & Industrial Controls
• Military
Functional Diagram
General Description
The HMC429LP4 & HMC429LP4E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs
with integrated resonators, negative resistance
devices, varactor diodes, and buffer amplifiers.
Covering 4.45 to 5.0 GHz, the VCO’s phase noise
performance is excellent over temperature, shock,
vibration and process due to the oscillator’s monolithic
structure. Power output is 4.0 dBm typical from a
single supply of 3.0V @ 30mA. The voltage controlled
oscillator is packaged in a low cost leadless QFN 4x4
mm surface mount package.
11
VCO
S
& PLOs - SMT
Electrical Specifi cations,
T
A
= +25° C, Vcc = +3V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
Supply Current (Icc) (Vcc = +3.0V)
Tune Port Leakage Current
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +5V
Frequency Drift Rate
6
-11
-23
10
14
0.4
0
30
10
1.0
Min.
Typ.
4.45 - 5.0
4.0
-105
10
Max.
Units
GHz
dBm
dBc/Hz
V
mA
μA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
11 - 72
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

HMC429LP4_08 Related Products

HMC429LP4_08 429LP4E HMC429LP4E
Description 4450 MHz - 5000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 4450 MHz - 5000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 4450 MHz - 5000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
Maximum operating temperature 85 Cel 85 Cel 85 °C
Minimum operating temperature -40 Cel -40 Cel -40 °C
Maximum operating frequency 5000 MHz 5000 MHz 5000 MHz
Minimum operating frequency 4450 MHz 4450 MHz 4450 MHz
Maximum voltage standing wave ratio 2 2 2
structure COMPONENT COMPONENT COMPONENT
Processing package description 4 × 4 MM, ROHS COMPLIANT, LEADLESS, Plastic, SMT, QFN-24 4 × 4 MM, ROHS COMPLIANT, LEADLESS, Plastic, SMT, QFN-24 -
Lead-free Yes Yes -
EU RoHS regulations Yes Yes -
state ACTIVE ACTIVE -
terminal coating MATTE tin (394) OVER copper MATTE tin (394) OVER copper -
Impedance characteristics 50 ohm 50 ohm -
Microwave RF Type NARROW band low POWER NARROW band low POWER -

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