HMC382LP3
/
382LP3E
v01.0610
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
7
AMPLIFIERS - LOW NOISE - SMT
Typical Applications
The HMC382LP3 / HMC382LP3E is ideal for:
• Cellular/3G Infrastructure
• Base Stations & Repeaters
• CDMA, W-CDMA, & TD-SCDMA
• GSM/GPRS & EDGE
Features
Noise Figure: 1 dB
Output IP3: +30 dBm
Gain: 17 dB
Externally Adjustable Supply Current
Single Positive Supply: +5V
50 Ohm Matched Input/Output
Functional Diagram
General Description
The HMC382LP3 & HMC382LP3E high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers are
ideal for GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz. This LNA
has been optimized to provide 1.0 dB noise figure, 17
dB gain and +30 dBm output IP3 from a single supply
of +5V. The HMC382LP3 & HMC382LP3E feature an
externally adjustable supply current which allows the
designer to tailor the linearity performance of the LNA
for each application. For applications which require
improved noise figure, please see the HMC618LP3(E).
Electrical Specifi cations,
T
A
= +25° C, Vdd1, Vdd2 = +5V, Rbias = 16 Ohms*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for
1dB Compression (P1dB)
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
1 MHz tone spacing)
Supply Current (Idd1 + Idd2)
14
Min.
Typ.
1.7 - 1.9
17
0.01
1.0
13
10
37
16
0.015
1.3
12
Max.
Min.
Typ.
1.9 - 2.0
15
0.01
1.05
12
13
36
16
0.015
1.35
11
Max.
Min.
Typ.
2.0 - 2.1
14
0.01
1.15
11
12
35
15.5
0.015
1.45
9
Max.
Min.
Typ.
2.1 - 2.2
12
0.01
1.2
10
9
35
14
0.015
1.5
Max.
Units
GHz
dB
dB/°C
dB
dB
dB
dB
dBm
29.5
67
30
67
30
67
29.5
67
dBm
mA
* Rbias resistor value sets current. See application circuit herein.
7-1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC382LP3
/
382LP3E
v01.0610
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Broadband Gain & Return Loss
25
20
15
RESPONSE (dB)
10
5
0
-5
-10
-15
-20
0.5
0.75
1
1.25
1.5 1.75
2 2.25
FREQUENCY (GHz)
2.5
2.75
3
Gain vs. Temperature
24
7
+25 C
+85 C
-40 C
20
GAIN (dB)
S21
S11
S22
16
12
8
1.6
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
2.2
2.3
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
RETURN LOSS (dB)
-5
+25 C
+85 C
-40 C
-3
+25 C
+85 C
-40 C
-6
-10
-9
-15
-12
-20
1.6
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
2.2
2.3
-15
1.6
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
2.2
2.3
Reverse Isolation vs. Temperature
-15
-20
Noise Figure vs. Temperature
2
1.6
ISOLATION (dB)
-25
-30
-35
-40
-45
-50
1.6
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
2.2
2.3
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
1.2
0.8
+25 C
+85 C
-40 C
0.4
0
1.6
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
2.2
2.3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
7-2
AMPLIFIERS - LOW NOISE - SMT
HMC382LP3
/
382LP3E
v01.0610
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
7
AMPLIFIERS - LOW NOISE - SMT
P1dB vs. Temperature @ Idd = 67 mA
20
Psat vs. Temperature @ Idd = 67 mA
20
18
P1dB (dBm)
Psat (dBm)
18
16
16
+25 C
+85 C
-40 C
14
+25 C
+85 C
-40 C
14
12
12
10
1.7
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
10
1.7
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
Output IP3 vs. Temperature Idd = @ 67 mA
34
32
30
IP3 (dBm)
28
26
24
22
20
1.7
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
Gain, Noise Figure & P1dB vs.
Supply Current @ 1900 MHz
24
22
GAIN (dB) & P1dB (dBm)
20
18
16
14
12
60
GAIN
P1dB
Noise Figure
1.4
1.2
NOISE FIGURE (dB)
1
0.8
0.6
0.4
0.2
70
80
90
100
110
120
+25 C
+85 C
-40 C
SUPPLY CURRENT (mA)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
RF Input Power (RFIN)(Vs = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 6.94 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+8.0 Vdc
+10 dBm
150 °C
0.451 W
144 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current vs. Vdd1 & Vdd2
Vdd (Vdc)
+4.5
+5.0
+5.5
Idd (mA)
67.2
67.4
67.6
Recommended Bias Resistor Values
for Various Idd1 & Idd2
Idd1 + Idd2 (mA)
60
70
Rbias (Ohms)
27
16
13
8.2
3.9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
80
100
120
7-3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC382LP3
/
382LP3E
v01.0610
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Outline Drawing
7
AMPLIFIERS - LOW NOISE - SMT
7-4
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST
BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
HMC382LP3
HMC382LP3E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
382
XXXX
382
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC382LP3
/
382LP3E
v01.0610
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
7
AMPLIFIERS - LOW NOISE - SMT
Pin Descriptions
Pin Number
1, 4, 5, 7, 9,
12, 14, 16
Function
N/C
Description
No connection necessary. These pins may be connected to
RF/DC ground. Performance will not be affected.
Interface Schematic
2
RFIN
This pin is AC coupled and matched to 50 Ohms.
3, 6, 10
GND
These pins and package bottom must
be connected to RF/DC ground.
8
Res
This pin is used to set the DC current of the amplifier
by selection of external bias resistor.
See application circuit.
11
RFOUT
This pin is AC coupled and matched to 50 Ohms.
13,15
Vdd2, Vdd1
Power supply voltage. Choke inductor and bypass
capacitors are required. See application circuit.
Application Circuit
Note: L1, L2 and C1 should be located as close to pins as possible.
7-5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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