HMC344
v06.0709
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
Typical Applications
The HMC344 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
Features
Broadband Performance: DC - 8 GHz
Non-Reflective Topology
Low Insertion Loss: 1.8 dB @ 6 GHz
Integrated 2:4 TTL Decoder
Small Size: 1.08 x 1.05 x 0.10 mm
4
SWITCHES - CHIP
• Test Instrumentation
Functional Diagram
General Description
The HMC344 is a broadband non-reflective GaAs
MESFET SP4T switch chip. Covering DC to 8 GHz,
this switch offers high isolation, low insertion loss,
and a compact form factor. This switch also includes
an on board binary decoder circuit which reduces
the number of required logic control lines to two. The
switch operates using a negative control voltage of
0/-5V, and requires a fixed bias of -5V. All data is tested
with the chip in a 50 Ohm test fixture connected via
0.025 mm (1 mil) diameter wire bonds of minimal length
0.31 mm (12 mils). This SP4T switch is also available
in SMT packaged form as the HMC344LC3.
Electrical Specifi cations,
T
A
= +25° C, With 0/-5V Control, Vee= -5V, 50 Ohm System
Parameter
Insertion Loss
Frequency
DC - 6.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
“On State”
“Off State”
DC - 2.0 GHz
DC - 8.0 GHz
DC - 8.0 GHz
0.5 - 8.0 GHz
0.5 - 8.0 GHz
DC - 8.0 GHz
35
150
ns
ns
44
37
34
30
10
7
7
17
37
Min.
Typ.
1.8
1.9
49
42
39
35
14
10
10
21
40
Max.
2.1
2.2
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
Isolation
Return Loss
Return Loss
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone)
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
4 - 20
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC344
v06.0709
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
Insertion Loss vs. Temperature
1
+ 25C
+ 85C
- 55C
Isolation
0
RF1
RF2
RF3
RF4
INSERTION LOSS (dB)
0
-20
ISOLATION (dB)
-1
-40
-2
-3
-60
4
0
1
2
3
4
5
6
FREQUENCY (GHz)
7
8
9
-4
0
1
2
3
4
5
6
FREQUENCY (GHz)
7
8
9
-80
Return Loss
0
0.1 and 1 dB Input Compression Point
25
INPUT COMPRESSION POINT (dBm)
1dB Compression Point
0.1dB Compression Point
RETURN LOSS (dB)
-5
RFC
RF1, RF2, RF3, RF4 ON
RF1, RF2, RF3, RF4 OFF
23
21
-10
19
-15
17
-20
0
1
2
3
4
5
6
7
8
9
FREQUENCY (GHz)
15
2
3
4
5
6
7
8
9
FREQUENCY (GHz)
Input Third Order Intercept Point
INPUT THIRD ORDER INTERCEPT (dBm)
45
43
41
39
37
RF1
RF2
RF3
RF4
35
1
2
3
4
5
6
7
8
9
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4 - 21
SWITCHES - CHIP
HMC344
v06.0709
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
Absolute Maximum Ratings
Bias Voltage Range (Vee)
Control Voltage Range (A & B)
Channel Temperature
Thermal Resistance
(Insertion Loss Path)
-7V
Vee -0.5V to +1V
150 °C
143 °C/W
1,030 °C/W
-65 to +150 °C
-55 to +85 °C
+24 dBm
Class 1A
Truth Table
Control Input
A
High
Low
High
Low
B
High
High
Low
Low
Signal Path State
RF COM to:
RF1
RF2
RF3
RF4
4
SWITCHES - CHIP
Thermal Resistance
(Terminated Path)
Storage Temperature
Operating Temperature
Maximum Input Power
ESD Sensitivity (HBM)
Bias Voltage & Current
Vee Range = -5 Vdc ±10%
Vee
(V)
-5
Idd (Typ)
(mA)
3
Idd (Max)
(mA)
6
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TTL/CMOS Control Voltages
State
Low
High
Bias Condition
-3V to 0 Vdc @ 60 uA Typ.
-5 to 4.2 Vdc @ 5 uA Typ.
4 - 22
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC344
v06.0709
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
Outline Drawing
4
SWITCHES - CHIP
Die Packaging Information
[1]
Standard
WP-2 (Waffle Pack)
Alternate
[2]
NOTES:
1. DIMENSIONS IN INCHES [MILLIMETERS].
2. DIE THICKNESS IS 0.004”.
3. TYPICAL BOND PAD IS 0.004” SQUARE.
4. TYPICAL BOND PAD SPACING IS 0.006” CENTER TO CENTER.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METALLIZATION: GOLD.
7. BACKSIDE METAL IS GROUND.
8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS.
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4 - 23
HMC344
v06.0709
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
Pad Descriptions
Pad Number
1, 2, 3,
4, 5, 10
Function
RF4, RFC, RF1,
RF2, RF3
Description
These pads are DC coupled and matched to 50 Ohms.
Blocking capacitors are required.
Interface Schematic
6
A
See truth table and control voltage table.
4
SWITCHES - CHIP
7
B
See truth table and control voltage table.
8
Vee
Supply Voltage -5.0 Vdc ±10%
9, Die
Bottom
GND
Die bottom and pad must be connected to RF/DC ground.
TTL Interface Circuit
Note:
Control inputs A and B can be driven directly with TTL logic with -5 Volts
applied to the HCT logic gates Vee pin and to Vee (pad) of the RF Switch.
4 - 24
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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