RFMD’s SGA8343Z is a high performance Silicon Germanium Hetero-
structure Bipolar Transistor (SiGe HBT) designed for operation from DC to
6GHz. The SGA8343Z is optimized for 3V operation but can be biased at
2V for low-voltage battery operated systems. The device provides high
gain, low NF, and excellent linearity at a low cost. It can be operated at
very low bias currents in applications where high linearity is not required.
The matte tin finish on the lead-free package utilizes a post annealing pro-
cess to mitigate tin whisker formation and is RoHS compliant per EU Direc-
Optimum Technology
tive 2002/95. This package is also manufactured with
Matching® Applied
green molding compounds that contain no antimony tri-
GaAs HBT
oxide nor halogenated fire retardants.
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain, Gmax (dB)
40
35
30
25
20
15
10
5
0
0
1
2
Features
DC to 6GHz Operation
0.9dB NF
MIN
at 0.9GHz
24dB GMAX at 0.9GHz
|GOPT|=0.10 at 0.9GHz
OIP3=+28dBm, P1dB=+9dBm
Low Cost, High Performance, Ver-
satility
Applications
Typical Performance - 3V, 10mA
2 .4
2 .1
1 .8
1 .5
1 .2
Gmax
Gain
Analog and Digital Wireless Sys-
tems
3G, Cellular, PCS, RFID
Fixed Wireless, Pager Systems
Driver Stage for Low Power Appli-
cations
Oscillators
NF
MIN
(dB)
NF
MIN
0 .9
0 .6
0 .3
0
6
7
8
3
4
5
Frequency (GHz)
Parameter
Maximum Available Gain
Min.
Specification
Typ.
23.9
19.3
17.7
0.94
1.10
1.18
22.0
1.40
16.5
27.8
9.0
Max.
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
Condition
0.9GHz, Z
S
=Z
S
*, Z
L
=Z
L
*
1.9GHz
2.4GHz
0.9GHz, Z
S
=Gamma
OPT
, Z
L
=Z
L
*
1.9GHz
2.4GHz
0.9GHz, Z
S
=Z
L
=50
1.9GHz, LNA Application Circuit Board
[2]
1.9GHz, LNA Application Circuit Board
[2]
1.9GHz, LNA Application Circuit Board
[2]
1.9GHz, LNA Application Circuit Board
[2]
Minimum Noise Figure
Insertion Gain
Noise Figure
Gain
Output Third Order Intercept Point
Output 1dB Compression Point
21.0
15.5
25.8
7.5
23.0
1.75
17.5
DC Current Gain
120
180
300
Breakdown Voltage
5.7
6.0
V
collector - emitter
Thermal Resistance
200
°C/W
junction - lead
Operating Voltage
4.0
V
collector - emitter
Operating Current
50
mA
collector - emitter
Test Conditions
CE
=3V, I
CQ
=10mA, 25°C (unless otherwise noted), [1] 100% tested - Insertion gain tested using a 50W contact board (no matching cir-
cuitry) during final production test. [2] Sample tested - Samples pulled from each wafer/package lot. Sample test specifications are based on statisti-
cal data from sample test measurements. The test fixture is an engineering application circuit board (parts are pressed down on the board). The
application circuit represents a trade-off between the optimal noise match and input return loss.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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