MMBT5551
MMBT5551
NPN
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
2.9
±0.1
0.4
3
1.3
±0.1
1.1
NPN
250 mW
SOT-23
(TO-236)
0.01 g
Version 2007-11-09
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Type
Code
1
1.9
2
Dimensions - Maße [mm]
1=B
2=E
3=C
Maximum ratings (T
A
= 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
V
CEO
V
CBO
V
EBO
P
tot
I
C
T
j
T
S
2.5 max
Grenzwerte (T
A
= 25°C)
MMBT5551
160 V
180 V
6V
250 mW
1
)
600 mA
-55...+150°C
-55…+150°C
Characteristics (T
j
= 25°C)
Min.
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
I
C
= 1 mA, V
CE
= 5 V
I
C
= 10 mA, V
CE
= 5 V
I
C
= 50 mA, V
CE
= 5 V
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
V
CEsat
V
CEsat
60
80
60
80
20
30
–
–
–
–
Kennwerte (T
j
= 25°C)
Typ.
–
–
–
–
–
–
–
–
–
–
Max.
–
–
250
250
–
–
0.15 V
0.15 V
0.25 V
0.20 V
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.
2
)
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
1
2
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
http://www.diotec.com/
© Diotec Semiconductor AG
1
MMBT5551
Characteristics (T
j
= 25°C)
Min.
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung
2
)
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
V
CB
= 120 V, (E open)
V
CB
= 120 V, T
j
= 100°C, (E open)
V
EB
= 4 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
I
C
= 10 mA, V
CE
= 10 V, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
Noise figure – Rauschzahl
V
CE
= 5 V, I
C
= 200 µA, R
G
= 2 kΩ,
f = 30 Hz ... 15 kHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking - Stempelung
MMBT5551
F
R
thA
–
–
< 420 K/W
1
)
MMBT5401
MMBT5551 = 3S
8 dB
C
EBO
–
–
30 pf
C
CBO
–
–
6 pF
f
T
100 MHz
–
300 MHz
MMBT5551
MMBT5551
MMBT5551
MMBT5551
V
BEsat
V
BEsat
I
CBO
I
CBO
I
EBO
–
–
–
–
–
–
–
–
–
–
1.0 V
1.0 V
50 nA
50 µA
50 nA
Kennwerte (T
j
= 25°C)
Typ.
Max.
Collector-Base cutoff current – Kollektor-Basis-Reststrom
Emitter-Base cutoff current – Emitter-Basis-Reststrom
2
1
Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
2
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