S15AYD2 ... S15MYD2
S15AYD2 ... S15MYD2
Surface Mount Silicon Rectifier Diodes – Single Diode
Silizium-Gleichrichterdioden für die Oberflächenmontage– Einzeldiode
Version 2011-05-25
1.2
4.5
±
0.2
10.25
±0.5
4
Type
Typ
Nominal current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
15 A
50...1000 V
TO-263AB
D
2
PAK
1.6 g
1
2
3
1.3
0.8
0.4
5.08
1
2/4
3
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
1
)
50
100
200
400
600
800
1000
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
1
)
50
100
200
400
600
800
1000
T
C
= 100°C
f > 15 Hz
T
A
= 25°C
T
A
= 25°C
Grenz- und Kennwerte
Forward voltage
Durchlass-Spannung
V
F
[V] T
j
= 25°C
I
F
= 5 A
I
F
= 15 A
< 1.3
< 1.3
< 1.3
< 1.3
< 1.3
< 1.3
< 1.3
15 A
80 A
1
)
400/450 A
1
)
800 A
2
s
1
)
-50...+150°C
-50...+175°C
< 1.0
< 1.0
< 1.0
< 1.0
< 1.0
< 1.0
< 1.0
I
FAV
I
FRM
I
FSM
i
2
t
S15AYD2
S15BYD2
S15DYD2
S15GYD2
S15JYD2
S15KYD2
S15MYD2
Max. average forward current, R-load
Dauergrenzstrom mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
S
T
j
1
Max. temperature of the case T
C
= 100°C – Max. Temperatur des Gehäuses T
C
= 100°C
http://www.diotec.com/
© Diotec Semiconductor AG
1
S15AYD2 ... S15MYD2
Characteristics
Leakage current
Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
T
j
= 25°C V
R
= V
RRM
T
j
= 125°C V
R
= V
RRM
I
R
I
R
R
thC
Kennwerte
< 10 µA
< 100 µA
< 2.1 K/W
120
[%]
100
10
[A]
2
10
80
1
T
j
= 125°C
T
j
= 25°C
60
40
10
-1
20
I
FAV
0
0
T
C
50
100
150
[°C]
I
F
10
-2
200a-(5a-0.95v)
0.4
V
F
0.8
1.0
1.2
1.4
[V] 1.8
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
2
http://www.diotec.com/
© Diotec Semiconductor AG
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