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SD101AW

Description
0.1 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size95KB,2 Pages
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
Environmental Compliance
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SD101AW Overview

0.1 A, SILICON, SIGNAL DIODE

SD101AW Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDIOTEC
package instructionROHS COMPLIANT, PLASTIC PACKAGE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.4 W
Maximum repetitive peak reverse voltage60 V
Maximum reverse recovery time0.001 µs
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
SD101AW ... SD101CW
SD101AW ... SD101CW
Surface Mount Si-Schottky Diodes
Si-Schottky-Dioden für die Oberflächenmontage
Version 2010-11-30
Nominal current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
0.1
Type
Code
15 mA
40...60 V
SOD-123
0.01g
2.7
1.1
0.6
Plastic case – Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.6
0.6
3.8
Dimensions - Maße [mm]
Maximum ratings and characteristics
Type
Typ
SD101CW
SD101BW
SD101AW
Power dissipation
Verlustleistung
Peak forward surge current, 10 µs square pulse
Stoßstrom für einen 10 µs Rechteckimpuls
Leakage current, T
j
= 25°C
Sperrstrom, T
j
= 25°C
SD101CW
SD101BW
SD101AW
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
40
50
60
Grenz- und Kennwerte
Forward voltage
Durchlass-Spannung
V
F
[V] / I
F
= 1 mA
V
F
[V] / I
F
= 15 mA
< 0.39
< 0.4
< 0.41
< 0.9
< 0.95
<1
T
A
= 25°C
T
A
= 25°C
V
R
= 30 V
V
R
= 40 V
V
R
= 50 V
P
tot
I
FSM
I
R
I
R
I
R
C
j
t
rr
T
j
400 mW
1
)
2A
< 200 nA
< 200 nA
< 200 nA
2.2 pF
typ. 1 ns
-55...+150°C
-55…+150°C
<300 K/W
1
)
Max. junction capacitance – Max. Sperrschichtkapazität
V
R
= 0 V, f = 1 MHz
Reverse recovery time – Sperrverzug
I
F
= 5 mA through/über I
R
= 5 mA to I
R
= 0.5 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Thermal Resistance Junction – Ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
T
S
R
thA
1
Valid, if terminals are kept at ambient temperature
Gültig, wenn die Anschlüsse auf Umgebungstemperatur gehalten werden
http://www.diotec.com/
© Diotec Semiconductor AG
1

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