SK1020PM ... SK1050PM
SK1020PM ... SK1050PM
Surface Mount Schottky Rectifiers
Schottky-Gleichrichter für die Oberflächenmontage
Version 2010-04-15
Nominal Current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
10 A
20...50 V
4.4 x 4.1 x 1.0
[mm]
0.1 g
1.0
±0.1
4.1
±0.2
1.8
±0.2
Type
Typ
0.15
5.1
±0.2
4.4
±0.2
Plastic case (full metal backside)
Kunststoffgehäuse (Rückseite vollflächig Metall)
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
±0.2
0.6
1.8
±0.2
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
20
30
40
50
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
20
30
40
50
1.4
±0.2
Grenz- und Kennwerte
Forward Voltage
Durchlass-Spannung
V
F
[V]
1
)
2
)
I
F
= 5 A
I
F
= 10 A
< 0.59
< 0.59
< 0.59
< 0.70
< 0.52
< 0.52
< 0.52
< 0.63
SK1020PM
SK1030PM
SK1040PM
SK1050PM
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
... in DC forward mode – bei Gleichstrom-Durchlassbetrieb
Storage temperature – Lagerungstemperatur
T
C
= 100°C
f > 15 Hz
T
A
= 25°C
T
A
= 25°C
I
FAV
I
FRM
I
FSM
i
2
t
T
j
T
j
T
S
10 A
2
)
20 A
2
)
100/110 A
2
)
50 A
2
s
2
)
-50...+150°C
≤ 200°C
-50...+175°C
1
2
T
j
= 25°C
Both anode pins connected – Beide Anodenanschlüsse kontaktiert
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© Diotec Semiconductor AG
1
SK1020PM ... SK1050PM
Characteristics
Leakage current
Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht - Gehäuse
T
j
= 25°C
T
j
= 100°C
V
R
= V
RRM
V
R
= V
RRM
I
R
I
R
R
thC
Kennwerte
< 300 µA
< 10 mA
< 2.5 K/W
120
[%]
100
10
2
[A]
10
SK1040PM
80
1
SK1050PM
60
40
10
-1
20
I
FAV
0
0
T
T
50
100
150
[°C]
I
F
10
Rated forward current vs. temp. of the terminals
Zul. Richtstrom in Abh. v. d. Temp. der Terminals
-2
0
0.4
0.6
1.0
V
F
[V]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
2
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© Diotec Semiconductor AG