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5KP110

Description
5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size103KB,4 Pages
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
Environmental Compliance
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5KP110 Overview

5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

5KP110 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDIOTEC
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage154.5 V
Minimum breakdown voltage122 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation5000 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-50 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation8 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage110 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
5KP6.5 ... 5KP110CA
5KP6.5 ... 5KP110CA
Unidirectional and Bidirectional Transient Voltage Suppressor Diodes
Unidirectionale und bidirectional Spannungs-Begrenzer-Dioden
Version 2011-10-28
Peak pulse power dissipation
Maximale Verlustleistung
Ø
8
±0.1
5000 W
6.5...110 V
Ø 8 x 7.5 [mm]
1.5 g
Maximum stand-off voltage
Maximale Sperrspannung
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
62.5
±0.5
Ø
1.2
±0.05
Dimensions - Maße [mm]
For bidirectional types (add suffix “C” or “CA”), electrical characteristics apply in both directions.
Für bidirektionale Dioden (ergänze Suffix “C” oder “CA”) gelten die elektrischen Werte in beiden Richtungen.
Maximum ratings and Characteristics
Peak pulse power dissipation (10/1000 µs waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)
Steady state power dissipation
Verlustleistung im Dauerbetrieb
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
Max. instantaneous forward voltage
Augenblickswert der Durchlaßspannung
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Anschluss
T
A
= 25°C
T
A
= 50°C
T
A
= 25°C
I
F
= 100A
7,5
Type
±0.1
Grenz- und Kennwerte
P
PPM
P
M(AV)
I
FSM
V
F
T
j
T
S
R
thA
R
thT
5000 W
1
)
8 W
2
)
400 A
3
)
< 3.5 V
3
)
-50...+175°C
-50...+175°C
< 16 K/W
2
)
< 4 K/W
1
2
3
Non-repetitive pulse see curve I
PP
= f (t
r
) / P
PP
= f (t
r
)
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve I
PP
= f (t
r
) / P
PP
= f (t
r
)
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
Unidirectional diodes only – Nur für unidirektionale Dioden
http://www.diotec.com/
© Diotec Semiconductor AG
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