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2SB709A_0712

Description
Silicon Epitaxial Planar Transistor
File Size182KB,4 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
Download Datasheet View All

2SB709A_0712 Overview

Silicon Epitaxial Planar Transistor

BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
High forward current transfer ratio h
FE
.
Mini type package, allowing downsizing
of the equipment and automatic insertion
through the tape packing and the magazine
packing.
Production specification
2SB709A
Pb
Lead-free
APPLICATIONS
For general amplification complementary to 2SD601A
SOT-23
ORDERING INFORMATION
Type No.
2SB709A
Marking
BQ1,BR1,BS1
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak collector Current
Collector Current
Collector Dissipation
Junction and Storage Temperature
Value
-45
-45
-7
-200
-100
200
-55~150
Units
V
V
V
mA
mA
mW
Document number: BL/SSSTC015
Rev.A
www.galaxycn.com
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