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FEATURES
GALAXY ELECTRICAL
DB3M.DB4M
VOLTAGE RANGE: 28-45 V
SILICON BIDIRECTIONAL DIACS
The three layer,two termnal,hermetically sealed diacs
are designed specifically for triggering thyristors.
They demonstrate low break over current at break
over voltage as they withstand peak pulse current,
The breakover symmetry is within three volts(DB6).
These diacs are intended for use in thyrisitors
phase control,circuits for lamp dimming,universal
motor speed control,and heat control.
MINI-MELF
Cathode indification
φ
.5±0.1
1
3.4
+0.3
-0.1
0.4±0.1
Dimensions in millimeters
ABSOLUTE RATINGS
Parameters
Symbols
DB3M,DB4M
UNITS
Power dissipation on printed
T
A
=50
o
C
Repetitive peak on-state
current
tp=20 S
f=120Hz
Pc
150.0
mW
I
TRM
T
J
T
STG
2.0
-40--- +125
-40--- +125
A
o
o
Operating junction temperature
Storage temperature
C
C
ELECTRICAL CHARACTERISTICS
Parameters
Test Conditions
Min
Breakover voltage
(NOTE
1)
V
BO
I+V
BO
I-
I-V
BO
I
I±
VI
V
o
I
BO
t
r
I
R
C=22nf
(NOTE 2)
See FIG.1
C=22nf
(NOTE 2)
See FIG.1
I=(I
BO
to I
F
=10mA)
See FIG.1
See FIG.2
C=22nf
(NOTE 2)
See FIG.3
V
R
=0.5 V
BO
See FIG.1
DB3M
28
32
36
±3.0
DB4M
35
40
45
UNITS
Typ
Max
V
Breakover voltage symmetry
Dynamic breakover voltage
(NOTE 1)
Output voltage
(NOTE 1)
Breakover current
(NOTE 1)
Rise time
(NOTE 1)
Leakage current
(NOTE 1)
Max
Min
Min
Max
Typ
Max
V
V
V
A
S
A
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5.0
5.0
100.0
1.5
10.0
NOTE:
1.
Electrical characteristics applicable in both forw ard and reverse dirctions.
2.
Connected in parallel w ith the devices
Document Number 0283006
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE
DB3M.DB4M
FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE
+I
F
10mA
-V
I
BO
I
B
0.5V
BO
+V
10KΩ
500KΩ
D.U.T
220V
60Hz
0.1
µ
F
V
o
R=20
Ω
Ｖ
V
BO
-I
F
FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR I
P
=0.5A
FIG.4--POWER DISSIPATION VERSUS AMBIENT
TEMPERATURE (MAXIMUM VALUES)
P(mW)
160
140
90%
I
P
120
100
80
60
10%
tr
40
20
0
0
10
20 30
40 50
60
70
80
90
100 110 120 130
Tamb(
℃ )
FIG.5--RELATIVE VARIATION OF V
BO
VERSUS JUNCTION
TEMPERATURE(TYPICAL VALUES)
FIG.6--PEAK PULSEE CURRENT VERENT VERSUS
PULSE DURATION(MAXIMUM VALUES)
I
TRM
(A)
1.08
VBO(TJ)
VBO(TJ=25
)
2
1.06
T
J
(
)
1
f=100Hz
TJ initial=25℃
1.04
0.1
tp(
µ
s)
1.02
1.00
25
50
75
100
125
0.01
10
100
1000
10000
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Document Number 0283006
BL
GALAXY ELECTRICAL
2.
Microcontroller MCU
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