SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC NPT IGBTs offer low switching losses, high energy efficiency
and high avalanche ruggedness for soft switching application such as
IH(induction heating), microwave oven, etc.
FEATURES
・High
speed switching
・High
system efficiency
・Soft
current turn-off waveforms
・Extremely
enhanced avalanche capability
KGT15N120NDS
MAXIMUM RATING
(Ta=25℃)
CHARACTERISTIC
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current @T
C
=100℃
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
@T
C
=25℃
@T
C
=100℃
@T
C
=25℃
@T
C
=100℃
SYMBOL
V
CES
V
GES
I
C
I
CM
*
I
F
I
FM
P
D
T
j
T
stg
RATING
1200
±20
30
15
45
15
45
176
70
150
-55 to + 150
UNIT
V
V
A
A
A
A
A
W
W
℃
℃
E
C
G
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
R
t h JC
R
t h JC
R
t h JA
MAX.
0.92
2.8
40
UNIT
℃/W
℃/W
℃/W
2011. 8. 10
Revision No : 0
1/7
KGT15N120NDS
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
CHARACTERISTIC
Static
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
BV
CES
I
CES
I
GES
V
GE(th)
V
GE
=0V , I
C
=1.0mA
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=±20V
V
GE
=V
CE,
I
C
=15mA
V
GE
=15V, I
C
=15A
Collector-Emitter Saturation Voltage
V
CE(sat)
V
GE
=15V, I
C
=15A, T
C
= 125℃
V
GE
=15V, I
C
=30A
Dynamic
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Ouput Capacitance
Reverse Transfer Capacitance
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
C
ies
C
oes
C
res
V
CE
=30V, V
GE
=0V, f=1MHz
V
CC
=600V, I
C
=15A, V
GE
=15V, R
G
=10Ω
Inductive Load, T
C
= 125℃
V
CC
=600V, I
C
=15A, V
GE
=15V,R
G
=10Ω
Inductive Load, T
C
= 25℃
V
CC
=600V, V
GE
=15V, I
C
= 15A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
70
9
40
30
30
120
150
2.2
0.8
3.1
35
35
160
200
2.5
1.5
4.0
1100
50
30
100
-
-
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
pF
pF
pF
1200
-
-
4.5
-
-
-
-
-
-
6.0
1.98
2.40
2.87
-
1.0
±100
7.5
2.5
-
-
V
mA
nA
V
V
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Marking
2011. 8. 10
Revision No : 0
2/7
KGT15N120NDS
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC
Diode Forward Voltage
SYMBOL
V
F
I
F
= 15A
TEST CONDITION
T
C
=25℃
T
C
=125℃
T
C
=25℃
T
C
=125℃
I
F
= 15A
di/dt = 200A/μ
s
T
C
=25℃
T
C
=125℃
T
C
=25℃
T
C
=125℃
MIN.
-
-
-
-
-
-
-
-
TYP.
2.0
2.3
300
410
17
18
2100
3200
MAX.
2.5
V
-
-
ns
-
25
A
-
4000
nC
-
UNIT
Diode Reverse Recovery Time
t
rr
Diode Peak Reverse Recovery Current
I
rr
Diode Reverse Recovery Charge
Q
rr
2011. 8. 10
Revision No : 0
3/7
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