APT8075 datasheet, PDF - EEWORLD Datasheet

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APT8075: DescriptionPower MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; File Size47KB，4 Pages; ManufacturerADPOW; Websitehttp://www.advancedpower.com/

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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APT8075BVR

800V

12A 0.750

Ω

POWER MOS V

Power MOS V

is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

TO-247

• Faster Switching

• Lower Leakage

• 100% Avalanche Tested

• Popular TO-247 Package

MAXIMUM RATINGS

Symbol

DSS

GSM

STG

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

= 25°C

Pulsed Drain Current

All Ratings: T

= 25°C unless otherwise specified.

APT8075BVR

UNIT

Volts

Amps

800

±30

±40

260

2.08

-55 to 150

300

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Volts

Watts

W/°C

°C

Amps

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

960

STATIC ELECTRICAL CHARACTERISTICS

Symbol

DSS

D(on)

DS(on)

DSS

GSS

GS(th)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

= 0V, I

= 250µA)

On State Drain Current

MIN

TYP

MAX

UNIT

Volts

Amps

800

0.75

250

±100

> I

D(on)

x R

DS(on)

Max, V

= 10V)

Drain-Source On-State Resistance

= 10V, 0.5 I

D[Cont.]

)

Ohms

µA

Volts

050-5608 Rev B

Zero Gate Voltage Drain Current (V

= V

DSS

, V

= 0V)

Zero Gate Voltage Drain Current (V

= 0.8 V

DSS

, V

= 0V, T

= 125°C)

Gate-Source Leakage Current (V

±30V,

= 0V)

Gate Threshold Voltage (V

= V

, I

= 1.0mA)

APT Website - http://www.advancedpower.com

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

APT8075 Related Products

	APT8075	APT8075BVR
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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