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S8050-C

Description
NPN Silicon Transistors
File Size212KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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S8050-C Overview

NPN Silicon Transistors

MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
S8050-B
S8050-C
S8050-D
NPN Silicon
Transistors
Features
TO-92 Plastic-Encapsulate Transistors
Capable of 0.625Watts(Tamb=25
O
C) of Power Dissipation.
Collector-current 0.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Marking : S8050
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
C
B
E
TO-92
A
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=0.1mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=40Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=20Vdc, I
B
=0)
Emitter Cutoff Current
(V
EB
=3.0Vdc, I
C
=0)
DC Current Gain
(I
C
=50mAdc, V
CE
=1.0Vdc)
DCCurrent Gain
(I
C
=500mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base- Emitter Voltage
(I
E
=100mAdc)
Transistor Frequency
(I
C
=20mAdc, V
CE
=6.0Vdc, f=30MHz)
Rank
Range
B
85-150
Min
40
25
5.0
---
---
---
Max
---
---
---
0.1
0.1
0.1
Units
Vdc
Vdc
Vdc
C
B
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
uAdc
uAdc
uAdc
D
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
EB
85
50
---
---
---
300
---
0.6
1.2
1.4
---
---
Vdc
Vdc
Vdc
DIM
A
B
C
D
E
G
INCHES
MIN
.170
.170
.550
.010
.130
.096
G
DIMENSIONS
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
SMALL-SIGNAL CHARACTERISTICS
f
T
150
---
MHz
CLASSIFICATION OF H
FE (1)
C
120-200
D
160-300
MAX
.190
.190
.590
.020
.160
.104
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
www.mccsemi.com
Revision:
A
1 of 2
2011/01/01

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