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S9018-I

Description
NPN Silicon NPN Silicon
File Size213KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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S9018-I Overview

NPN Silicon NPN Silicon

MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
S9018-G
S9018-H
S9018-I
Features
TO-92 Plastic-Encapsulate Transistors
Capable of 0.31Watts(Tamb=25
O
C) of Power Dissipation.
Collector-current 0.05A
Collector-base Voltage 25V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Marking : S9018
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
C
BE
B
NPN Silicon
Transistors
TO-92
A
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=0.1mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=20Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=15Vdc, I
B
=0)
Emitter Cutoff Current
(V
EB
=3.0Vdc, I
C
=0)
DC Current Gain
(I
C
=1.0mAdc, V
CE
=5.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=10mAdc, I
B
=1.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=10mAdc, I
B
=1.0mAdc)
Transistor Frequency
(I
C
=5.0mAdc, V
CE
=5.0Vdc,
f=400MHz)
G
70-108
H
97-146
Min
25
18
4.0
---
---
---
Max
---
---
---
0.1
0.1
0.1
Units
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
D
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
C
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
BE(sat)
28
---
---
270
0.5
1.4
---
Vdc
Vdc
G
DIMENSIONS
SMALL-SIGNAL CHARACTERISTICS
f
T
600
---
MHz
DIM
A
B
C
D
E
G
INCHES
MIN
.170
.170
.550
.010
.130
.096
MM
MAX
.190
.190
.590
.020
.160
.104
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
CLASSIFICATION OF H
FE
Rank
Range
I
130-198
www.mccsemi.com
Revision:
A
1 of 2
2011/01/01

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