MT-5001 datasheet, PDF - EEWORLD Datasheet

MT-5001: DescriptionPower Bipolar Transistor, 125A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PPS-250, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size285KB，1 Pages; ManufacturerPowerTech Inc

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MT-5001 Overview

Power Bipolar Transistor, 125A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PPS-250, 3 PIN

Parameter Name	Attribute value
Maker	PowerTech Inc
package instruction	PPS-250, 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	125 A
Collector-emitter maximum voltage	80 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	175
JESD-30 code	R-PXFM-X3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	350 W
Maximum power dissipation(Abs)	350 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	2.5 V

	MT-5001	MT-5000
Description	Power Bipolar Transistor, 125A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PPS-250, 3 PIN	Power Bipolar Transistor, 125A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PPS-250, 3 PIN
Maker	PowerTech Inc	PowerTech Inc
package instruction	PPS-250, 3 PIN	PPS-250, 3 PIN
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	125 A	125 A
Collector-emitter maximum voltage	80 V	60 V
Configuration	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	175	175
JESD-30 code	R-PXFM-X3	R-PXFM-X3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN
Maximum power consumption environment	350 W	350 W
Maximum power dissipation(Abs)	350 W	350 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED
Terminal location	UNSPECIFIED	UNSPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
VCEsat-Max	2.5 V	2.5 V

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