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STM1N95/3

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size152KB,1 Pages
ManufacturerSemiconductor Technology Inc
Download Datasheet Parametric View All

STM1N95/3 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

STM1N95/3 Parametric

Parameter NameAttribute value
MakerSemiconductor Technology Inc
package instruction,
Reach Compliance Codecompliant
ConfigurationSingle
Maximum drain current (Abs) (ID)1 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
surface mountNO
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