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BTC4505N3Q

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size66KB,3 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Download Datasheet Parametric Compare View All

BTC4505N3Q Overview

Transistor,

BTC4505N3Q Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerComchip Technology
package instruction,
Reach Compliance Codecompliant
High Voltage
Transistor (NPN)
BTC4505N3
Features
High breakdown voltage. (BVceo =400V)
Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/1mA
C
COMCHIP
www.comchiptech.com
COLLECTOR
3
1
BASE
SOT-23
.119 (3.0)
.110 (2.8)
2
EMITTER
.020 (0.5)
Top View
.056 (1.40)
.047 (1.20
)
.006 (0.15)
.002 (0.05)
.037(0.95) .037(0.95)
.006 (0.15)max.
.020 (0.5)
.020 (0.5)
.103 (2.6)
.086 (2.2)
Dimensions in inches (millimeters)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limit
400
400
6
300
0.225
150
-55~+150
MDS0405003A
Page 1
.044 (1.10)
.035 (0.90)
Unit
V
V
V
mA
W
°C
°C

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Is it Rohs certified? incompatible incompatible
Maker Comchip Technology Comchip Technology
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