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IRF9240SMD

Description
11 A, 200 V, 0.52 ohm, P-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size25KB,2 Pages
ManufacturerSEME-LAB
Websitehttp://www.semelab.co.uk
Download Datasheet Parametric Compare View All

IRF9240SMD Overview

11 A, 200 V, 0.52 ohm, P-CHANNEL, Si, POWER, MOSFET

IRF9240SMD Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage200 V
Processing package descriptionHERMETIC SEALED, SMD1, 3 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeCHIP CARRIER
surface mountYes
Terminal formNO LEAD
terminal coatingTIN LEAD
Terminal locationBOTTOM
Packaging MaterialsCERAMIC, METAL-SEALED COFIRED
structureSINGLE WITH BUILT-IN DIODE
Shell connectionISOLATED
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeP-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current11 A
Rated avalanche energy500 mJ
Maximum drain on-resistance0.5200 ohm
Maximum leakage current pulse44 A
IRF9240
IRFN9240
IRF9240SMD
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
P–CHANNEL
POWER MOSFET
IRF9240
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
D
22.23
(0.875)
max.
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
G
S
FEATURES
• P–CHANNEL POWER MOSFET
3 .6 0 (0 .1 4 2 )
M a x .
TO–3 Package
(TO-204AA)
Pin 1 – Gate
Pin 2 – Source
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
Pin 3 – Drain
IRFN9240SMD
• HIGH VOLTAGE
• INTEGRAL PROTECTION DIODE
• AVAILABLE IN TO-3 (TO-204AA) AND
CERAMIC SURFACE MOUNT SMD1
(TO276AB)PACKAGE
1
3
0 .7 6
(0 .0 3 0 )
m in .
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
2
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
SMD1 (TO276AB)
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
Note:
IRF9240SMD also available with
pins 1 and 3 reversed on SMD 1
package.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
T
stg
Drain – Source Voltage
Drain – Gate Voltage (R
GS
= 20KΩ)
Gate – Source Voltage
Continuous Drain Current
@ T
case
= 25°C
@ T
case
= 100°C
Pulsed Drain Current
Max. Power Dissipation
@ T
case
= 25°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
–200V
–200V
±20V
–11A
–7.0A
–44A
125W
1W / °C
–55 to 150°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3345
Issue 2

IRF9240SMD Related Products

IRF9240SMD IRF9240_03 IRFN9240
Description 11 A, 200 V, 0.52 ohm, P-CHANNEL, Si, POWER, MOSFET 11 A, 200 V, 0.52 ohm, P-CHANNEL, Si, POWER, MOSFET 11 A, 200 V, 0.52 ohm, P-CHANNEL, Si, POWER, MOSFET
Number of terminals 3 3 3
Minimum breakdown voltage 200 V 200 V 200 V
Processing package description HERMETIC SEALED, SMD1, 3 PIN HERMETIC SEALED, SMD1, 3 PIN HERMETIC SEALED, SMD1, 3 PIN
state ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR
Package Size CHIP CARRIER CHIP CARRIER CHIP CARRIER
surface mount Yes Yes Yes
Terminal form NO LEAD NO LEAD NO LEAD
terminal coating TIN LEAD TIN LEAD TIN LEAD
Terminal location BOTTOM BOTTOM BOTTOM
Packaging Materials CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Shell connection ISOLATED ISOLATED ISOLATED
Number of components 1 1 1
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Channel type P-CHANNEL P-CHANNEL P-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Maximum leakage current 11 A 11 A 11 A
Rated avalanche energy 500 mJ 500 mJ 500 mJ
Maximum drain on-resistance 0.5200 ohm 0.5200 ohm 0.5200 ohm
Maximum leakage current pulse 44 A 44 A 44 A

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