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SML150FB12

Description
HIGH PERFORMANCE POWER SEMICONDUCTORS
File Size174KB,7 Pages
ManufacturerSEME-LAB
Websitehttp://www.semelab.co.uk
Download Datasheet View All

SML150FB12 Overview

HIGH PERFORMANCE POWER SEMICONDUCTORS

SML150FB12
Attributes:
-aerospace build standard
-high reliability
-lightweight
-metal matrix base plate
-AlN isolation
Maximum rated values/Electrical Properties
Collector-emitter Voltage
DC Collector Current
Repetitive peak Collector Cur-
rent
Total PowerDissipation
Tc=70C, Tvj=175C
Tc=25C,Tvj=175C
tp=1msec,Tc=80C
Tc=25C
Vce
1200
150
200
300
850
V
A
A
W
I
c
, nom
Ic
I
crm
P
tot
Gate-emitter peak voltage
DC Forward Diode
Current
Repetitive Peak
Forward Current
I
2
t value per diode
tp=1msec
Vr=0V, tp=10msec,
Tvj=125C
RMS, 50Hz, t=1min
V
ges
I
f
I
frm
+/-20
150
300
V
A
A
I
2t
V
isol
4600
2500
A
2
sec
V
Isolation test voltage
Collector-emitter saturation
voltage
Gate Threshold voltage
Input capacitance
Reverse transfer Capacitance
Collector emitter cut off
current
Gate emitter cut off current
Ic=150A,Vge=15V, Tc=25C
Ic=150A,Vge=15V,Tc=125C
Ic=6.4mA,Vce=Vge, Tvj=25C
f=1MHz,Tvj=25C,Vce=25V,
Vge=0V
f=1MHz,Tvj=25C,Vce=25V,
Vge=0V
Vce=600V,Vge=0V,Tvj=25C
Vce=600V,Vge=0V,Tvj=125C
Vce=0V,Vge=20V,Tvj=25C
V
ce(sat)
1.70
2.0
5.0
5.8
10.5
0.5
1
1
2.15
V
V
V
nF
nF
Vge
(th)
C
ies
C
res
I
ces
I
ges
6.5
5
400
mA
mA
nA
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